Solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) obtained viahydrolysis/pyrolysis of an organic precursor present an excellent technique toobtain high performance electronic devices with low manufacturing cost. In thecurrent work, we propose the use of an alternative deposition method, based on apolymeric precursor route (known as Pechini), to obtain solution-processed ZnOcompact films as the active layer of TFTs. The elimination of the organic phaseand the formation of inorganic thin-films was carried out by thermal treatmentat different temperatures (ranging from 200°C to 500°C) and atdifferent times (from 5 min to 2 hours), being monitored by UV-vis and infrared(IR) optical absorption spectroscopy. It was observed that, for temperaturesabove 400°C and treatment times superior to 30 min, the organic phasewas completely eliminated, remaining only the inorganic (metal oxide) phase. Theoptical bandgap of the resulting ZnO films, determined from UV-vis absorption,is about 3.4 eV. The electrical characteristics (output and transfer curves) ofthe obtained devices demonstrate the feasibility of Pecchini method to buildsolution-processed metal oxide TFTs. The results for the electrical mobility ofthe majority charge-carriers (electrons) and for the threshold voltage were 0.39cm2.V-1.s-1 and 0.45 V, respectively.