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Structural Correlation of Ferroelectric Behavior in Mixed Hafnia-Zirconia High-k Dielectrics for FeRAM and NCFET Applications

Published online by Cambridge University Press:  28 February 2019

Vineetha Mukundan ,
Karsten Beckmann ,
Kandabara Tapily ,
Steven Consiglio ,
Robert Clark ,
Gert Leusink ,
Nathaniel Cady  and
Alain C Diebold
Vineetha Mukundan*
Affiliation:
SUNY Polytechnic Institute, Albany, NY
Karsten Beckmann
Affiliation:
SUNY Polytechnic Institute, Albany, NY
Kandabara Tapily
Affiliation:
TEL Technology Center, America, LLC, Albany, NY
Steven Consiglio
Affiliation:
TEL Technology Center, America, LLC, Albany, NY
Robert Clark
Affiliation:
TEL Technology Center, America, LLC, Albany, NY
Gert Leusink
Affiliation:
TEL Technology Center, America, LLC, Albany, NY
Nathaniel Cady
Affiliation:
SUNY Polytechnic Institute, Albany, NY
Alain C Diebold
Affiliation:
SUNY Polytechnic Institute, Albany, NY
*
†(Email: [email protected])
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Abstract

The recent discovery of ferroelectric behavior in doped hafnia-based dielectrics, attributed to a non-centrosymmetric orthorhombic phase, has potential for use in attractive applications such as negative differential capacitance field-effect-transistors (NCFET) and ferroelectric random access memory devices (FeRAM). Alloying with similar oxides like ZrO2, doping with specific elements such as Si, novel processing methods, encapsulation and annealing schemes are also some of the techniques that are being explored to target structural modifications and stabilization of the non-centrosymmetric phase. In this study, we utilized synchrotron-based x-ray diffraction in the grazing incidence in plane geometry (GIIXRD) to determine the crystalline phases in hafnia-zirconia (HZO) compositional alloys deposited by atomic layer deposition (ALD). Here we compare and contrast the structural phases and ferroelectric properties of mechanically confined HZO films in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures. Both MIM and MIS structures reveals a host of reflections due to non-monoclinic phases in the d-spacing region between 1.75Å to 4Å. The non-monoclinic phases are believed to consist of tetragonal and orthorhombic phases. Compared to the MIS structures a suppression of the monoclinic phase in MIM structures with 50% zirconia or less was observed. The correlation of the electrical properties with the structural analysis obtained by GIIXRD highlights the importance of understanding the effects of the underlying substrate (metal vs. Si) for different target applications.

Keywords

ferroelectricx-ray diffraction (XRD)HfZr
Type
Articles
Information
MRS Advances , Volume 4 , Issue 9: Electronic, Photonic and Magnetic Materials , 2019 , pp. 545 - 551
Copyright
Copyright © Materials Research Society 2019 

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References

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