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Single-trap kinetic in Si nanowire FETs: effect of gamma radiation treatment

Published online by Cambridge University Press:  16 May 2016

I. Zadorozhnyi ,
J. Li ,
S. Pud ,
M. Petrychuk  and
S. Vitusevich
I. Zadorozhnyi
Affiliation:
Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich, Germany
J. Li
Affiliation:
Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich, Germany
S. Pud
Affiliation:
Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich, Germany
M. Petrychuk
Affiliation:
Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich, Germany Radiophysics Faculty, Taras Shevchenko National University Kyiv, 03022 Kyiv, Ukraine
S. Vitusevich*
Affiliation:
Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich, Germany
*
*Corresponding author. E-mail: [email protected]. On leave from Institute of Semiconductor Physics, NASU, Kyiv, Ukraine.
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Abstract

Here we report on the effect of gamma radiation treatment on transport properties and single-trap kinetics in Si nanowire (NW) field effect transistor (FET) structures. We used noise spectroscopy as a powerful method for advanced physical characterization of nanoscale devices. Our results demonstrate that transport properties of NW FETs can be changed using small doses of gamma radiation treatment. We reveal an enhancement of the gate coupling effect, which is explained as a result of the reorganization of the native defect structure after treatment. The radiation treatment approach allows the single-trap dynamic to be changed, which opens up prospects for a number of fundamental studies and applications of Si NW FET device structures, including biosensors.

Keywords

nanostructuresensorelectrical properties
Type
Articles
Information
MRS Advances , Volume 1 , Issue 56: Biomaterials and Soft Materials/Engaged Learning of Materials Science and Engineering in the 21st Century , 2016 , pp. 3755 - 3760
Copyright
Copyright © Materials Research Society 2016 

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References

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