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Selective fabrication of Si nanodots and nanowires

Published online by Cambridge University Press:  17 June 2016

Anahita Haghizadeh  and
Haeyeon Yang
Anahita Haghizadeh
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
Haeyeon Yang*
Affiliation:
Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A. Center for Security Printing and Anti-Counterfeiting Technology, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
*
*(Email: [email protected])
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Abstract

We report observation of narrow nanowires and high density nanodots on the Si(001) surfaces when they are exposed to a single application of interferential irradiation of laser pulses of 7 ns. These nanostructures form selectively depending on interference parameters so that their placements can be controlled by controlling the parameters. The morphologies of the nanostructures are studied by atomic force microscopy. The nanowire width increases with interference period. The narrowest nanowires observed have the width smaller than 26 nm, which is eight times smaller than the interference period while the nanodots have a very large density of 1.8 ± 0.45) × 1011/cm2.

Keywords

self-assemblyscanning probe microscopy (SPM)Si
Type
Articles
Information
MRS Advances , Volume 1 , Issue 33: Nanotechnology , 2016 , pp. 2337 - 2343
Copyright
Copyright © Materials Research Society 2016 

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References

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