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Seed Layer Assisted Hydrothermal Deposition of Low-resistivity ZnO Thin Films

Published online by Cambridge University Press:  07 February 2017

Eugene Chubenko ,
Vitaly Bondarenko ,
Amir Ghobadi ,
Gamze Ulusoy ,
Kağan Topalli  and
Ali Kemal Okyay
Eugene Chubenko
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Minsk, 220013, Belarus
Vitaly Bondarenko*
Affiliation:
Belarusian State University of Informatics and Radioelectronics, Minsk, 220013, Belarus
Amir Ghobadi
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara, TR 06800, Turkey
Gamze Ulusoy
Affiliation:
UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara, TR 06800, Turkey
Kağan Topalli
Affiliation:
UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara, TR 06800, Turkey
Ali Kemal Okyay
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara, TR 06800, Turkey UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara, TR 06800, Turkey
*
*(Email: [email protected])
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Abstract

In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer.

Keywords

atomic layer depositionhydrothermalluminescence
Type
Articles
Information
MRS Advances , Volume 2 , Issue 14: Nanomaterials , 2017 , pp. 799 - 804
Copyright
Copyright © Materials Research Society 2017 

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References

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