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Scalable Non-injection Synthesis of Cd-Free Copper Indium Sulfide/Zinc Sulfide Quantum Dots for Third-Gen Photovoltaic Application

Published online by Cambridge University Press:  28 July 2016

Yaxin Zheng
Affiliation:
Center for Advanced Photovoltaics and Display Systems, Electrical & Computer Engineering Department, University of Waterloo, 200 University Ave. West, Waterloo, ON N2L 3G1, Canada
Bahareh Sadeghimakki*
Affiliation:
Center for Advanced Photovoltaics and Display Systems, Electrical & Computer Engineering Department, University of Waterloo, 200 University Ave. West, Waterloo, ON N2L 3G1, Canada
Navid. M. S. Jahed
Affiliation:
Center for Advanced Photovoltaics and Display Systems, Electrical & Computer Engineering Department, University of Waterloo, 200 University Ave. West, Waterloo, ON N2L 3G1, Canada
Siva Sivoththaman
Affiliation:
Center for Advanced Photovoltaics and Display Systems, Electrical & Computer Engineering Department, University of Waterloo, 200 University Ave. West, Waterloo, ON N2L 3G1, Canada
*
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Abstract

Copper Indium Sulfide (CIS)-based quantum dots (QDs) are considered as a safer alternative compared to carcinogenic cadmium- and lead-based QDs. Here, we present a facile, high throughput, and non-injection method of synthesizing CIS-based QDs. The structure, shape, size, and crystalline structure of the synthesized QDs were studied using high resolution transmission electron microscopy (HRTEM). The effects of temperature and compositional dependency on the structure and optical properties of the resulting QDs were investigated using elemental, absorption, photoluminescence (PL), and time-resolved spectroscopic analyses. We observed that a gradient increase of temperature during the core growth, as well as addition of excess indium (In) and zinc (Zn) precursors during core and core/shell synthesis, at low growth temperatures, resulted in QDs with improved PL and lifetime. The large Stokes shift, broad emission spectra, and long-lived emission of the synthesized QDs reveal their potential applicability to third generation photovoltaic and optoelectronic devices.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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