Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-23T04:56:31.406Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of NiSi2 and application to thermoelectric silicide elements used as electrodes

Published online by Cambridge University Press:  05 February 2018

Kentaro Yamamoto ,
Tomoyuki Nakamura ,
Kenjiro Fujimoto ,
Ryuji Tamura  and
Keishi Nishio
Kentaro Yamamoto*
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Nijyuku, Katushika-Ku, Tokyo, 125-8585Japan
Tomoyuki Nakamura
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Nijyuku, Katushika-Ku, Tokyo, 125-8585Japan SWCC SHOWA CABLE SYSTEMS CO., LTD. 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253Japan
Kenjiro Fujimoto
Affiliation:
Department of Pure and Applied Chemistry, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba, 287-8510Japan
Ryuji Tamura
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Nijyuku, Katushika-Ku, Tokyo, 125-8585Japan
Keishi Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Nijyuku, Katushika-Ku, Tokyo, 125-8585Japan
*
*(Email: [email protected])
Get access

Abstract

We applied NiSi2 as an electrode for thermoelectric modules because NiSi2 has high electric conductivity and is expected to suppress the inter-diffusion of Si from MgSi2 and higher manganese silicide (HMS). The thermal expansion coefficient of NiSi2 is close to that of Mg2Si but differs from that of HMS. Therefore, to reduce thermal stress, we tried to insert a buffer layer consisting of HMS and NiSi2 for the interface between the HMS sintered body and the NiSi2 electrode. The NiSi2 was prepared by using spark plasma sintering (SPS) equipment. NiSi2 electrodes and gradients were formed and connected with the HMS by SPS treatment. Crack-free bonding was achieved by inserting gradients consisting of HMS and NiSi2. The inserted composite buffer layer reduced interface stress and interface resistance between HMS and NiSi2.

Keywords

thermoelectricthermal stressescrystalline
Type
Articles
Information
MRS Advances , Volume 3 , Issue 24: Energy and Sustainability , 2018 , pp. 1361 - 1365
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Yang, R., Chen, S., Fan, W., Gao, Xi., Long, Y., Wang, W., Munir, Z.A., J Alloys Com., 704 545–551, 2017Google Scholar
Nakamura, T., Hatakeyama, K., Minowa, M. Mito, Y., Arai, K., Iida, T., Nishio, K., J ELEC MAT, Vol. 44, No. 10, 2015Google Scholar
Lavoie, C., d’Heurle, F.M., Detavenier, C., Cabral, C. Jr. Microelec. Eng. 70 144–157, 2003Google Scholar
Gambino, J.P., Colgan, E.G., Mater. Chem. Phys. 25 395003, 2013Google Scholar
Sakamoto, T., Iida, T., Honda, Y., Tada, M., Sekiguchi, T., Nishio, K., Kogo, Y., Takanashi, Y., J ELEC MAT, Vol. 41, No. 6, 2012Google Scholar
Maex, K. and Rossum, M.V., Properties of Metal Silicides (Emis Datareviews, No. 14). An INSPEC Publication, pp. 164–167, 189–195., 19956.Google Scholar