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Optical Properties of Germanium Doped Cubic GaN

Published online by Cambridge University Press:  20 December 2016

Donat J. As ,
Michael Deppe ,
Jürgen Gerlach  and
Dirk Reuter
Donat J. As*
Affiliation:
Universität Paderborn, Department Physik, Warburger Strasse 100, 33098 Paderborn, Germany
Michael Deppe
Affiliation:
Universität Paderborn, Department Physik, Warburger Strasse 100, 33098 Paderborn, Germany
Jürgen Gerlach
Affiliation:
Leibniz-Institut für Oberflächenmodifizierung (IOM) e.V., Permoserstr. 15, 04318 Leipzig, Germany
Dirk Reuter
Affiliation:
Universität Paderborn, Department Physik, Warburger Strasse 100, 33098 Paderborn, Germany
*
*(Email: [email protected])
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Abstract

We report on recent doping experiments of cubic GaN epilayers by Ge and investigate in detail the optical properties by photoluminescence spectroscopy. Plasma-assisted molecular beam epitaxy was used to deposit Ge-doped cubic GaN layers with nominal thicknesses of 600 nm on 3C-SiC(001)/Si(001) substrates. The Ge doping level could be varied by around six orders of magnitude by changing the Ge effusion cell temperature. A maximum free carrier concentration of 3.7×1020 cm-3 was measured in the GaN layers via Hall-effect at room temperature. Low temperature photoluminescence (PL) showed a clear shift of the donor-acceptor emission to higher energies with increasing Ge-doping. Above a Ge concentration of ∼ 2x1018cm-3 the near band edge lines merge to one broad band. From temperature dependent measurements of the observed excitonic and donor-acceptor transitions a donor-energy of ∼ 36 meV could be estimated for Ge.

Keywords

dopantmolecular beam epitaxy (MBE)luminescence
Type
Articles
Information
MRS Advances , Volume 2 , Issue 5: Electronics, Magnetics and Photonics , 2017 , pp. 283 - 288
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Kirste, R., Hoffmann, M.P., Sachet, E., Bobea, M., Bryan, Z., Nenstiel, C., Hoffmann, A., Maria, J.-P., Collazo, R., and Sitar, Z., Appl. Phys. Lett. 100, 122104 (2012)Google Scholar
Fritze, S., Dadgar, A., Witte, H., Bügler, M., Rohrbeck, A., Bläsing, J., Hoffmann, A., and Krost, A., Appl. Phys. Lett. 100, 122104 (2012)Google Scholar
As, D.J., Microelectronics Journal 40, 204 (2009)Google Scholar
Deppe, M., Gerlach, J. W., Reuter, D., As, D.J., Phys. Stat. Sol. (b) (2016) (submitted)Google Scholar
As, D.J., Schmilgus, F., Wang, C., Schöttker, B., Schikora, D., and Lischka, K., Appl. Phys. Lett. 70, 1311 (1997)Google Scholar
De-Sheng, J., Makita, Y., Ploog, K., Queisser, H.J., J. Appl. Phys. 53(2), 999 (1982)Google Scholar
Abramov, A.P., Abramova, I.N., Verbin, S. Yu., Gerlovin, I. Ya., Grigorév, S.R., Ignatév, I.V., Karimov, O.Z., Novikov, A.B., and Novikov, B.N., Semiconductors 27, 647 (1993)Google Scholar
Burstein, E., Phys. Rev. 83, 632 (1954)Google Scholar
Menniger, J., Jahn, U., Brandt, O., Yang, H., and Ploog, K., Phys. Rev. B 53, 1881 (1996)Google Scholar
As, D. J., Defect Diffus. Forum 206-207, 87 (2002)Google Scholar
Feneberg, M., Röppischer, M., Cobet, C., Esser, N., Schörmann, J., Schupp, T., As, D. J., Hörich, F., Bläsing, J., Krost, A., and Goldhahn, R., Phys. Rev. B 85, 155207 (2012)Google Scholar
Ramirez-Flores, G., Navarro-Contreras, H., Lastras-Martinez, A., Powell, R. C., and Greene, J. E., Phys. Rev. B 50, 8433 (1994)Google Scholar
Hopfield, J.J., Thomas, D.G., Gershenzon, M., Phys. Rev. Lett. 10(5), 162 (1963)CrossRefGoogle Scholar
As, D.J., Richter, A., Busch, J., Schöttker, B., Lübbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegeis, W., Burkhardt, W., Meyer, B.K., MRS Symp. Proc. Vol. 595, W3.81 (2000)Google Scholar
Leroux, M., Grandjean, N., Beaumont, B., Nataf, G., Semond, F., Massies, J., and Gibart, P., J. Appl. Phys. 86, 3721 (1999)Google Scholar
Haynes, J.R., Phys. Rev. Lett. 4, 361 (1960)Google Scholar
Halsted, R.E. and Aven, M., Phys. Rev. Lett. 14, 64 (1965)Google Scholar
Freitas, J.A. Jr., Moore, W.J., Shanabrook, B.V., Braga, G.C.B., Lee, S.K., Park, S.S., and Han, J.Y., Phys. Rev. B 66, 233311 (2002)Google Scholar
Zhang, X., Kung, P., Saxler, A., Walker, D. Wang, T. and Razeghi, M., Acta Physica Polonica A 88, 601 (1995)Google Scholar
Wang, H. and Chen, A.-B., J. Appl. Phys. 87, 7859 (2000)Google Scholar