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On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

Published online by Cambridge University Press:  16 January 2017

F. Michael Sawatzki ,
Alrun A. Hauke ,
Duy Hai Doan ,
Peter Formanek ,
Daniel Kasemann ,
Thomas Koprucki  and
Karl Leo
F. Michael Sawatzki*
Affiliation:
Dresden Integrated Center for Applied Physics and Photonic Materials IAPP, Dresden, Germany
Alrun A. Hauke
Affiliation:
Phillips Universität Marburg, molecular solids, MarburgGermany
Duy Hai Doan
Affiliation:
Weierstraß-Institut für Angewandte Analysis und Stochastik, Berlin, Germany
Peter Formanek
Affiliation:
Leibnitz Institut für Polymerforschung, Dresden, Germany
Daniel Kasemann
Affiliation:
CreaPhys GmbH, Dresden, Germany
Thomas Koprucki
Affiliation:
Weierstraß-Institut für Angewandte Analysis und Stochastik, Berlin, Germany
Karl Leo
Affiliation:
Dresden Integrated Center for Applied Physics and Photonic Materials IAPP, Dresden, Germany
*
*(Email: [email protected])
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Abstract

To benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.

We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

Keywords

organicoptoelectronicsemiconducting
Type
Articles
Information
MRS Advances , Volume 2 , Issue 23: Electronics, Magnetics and Photonics , 2017 , pp. 1249 - 1257
Copyright
Copyright © Materials Research Society 2017 

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References

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