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Nanopatterning Hexagonal Boron Nitride with Helium Ion Milling: Towards Atomically-Thin, Nanostructured Insulators

Published online by Cambridge University Press:  01 February 2018

S. Matt Gilbert*
Affiliation:
Department of Physics, University of California, Berkeley, CA, 94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720 Kavli Energy Nanosciences Institute, Berkeley, CA, 94720
Stanley Liu
Affiliation:
Department of Physics, University of California, Berkeley, CA, 94720 Kavli Energy Nanosciences Institute, Berkeley, CA, 94720
Gabe Schumm
Affiliation:
Department of Physics, University of California, Berkeley, CA, 94720 Kavli Energy Nanosciences Institute, Berkeley, CA, 94720
Alex Zettl
Affiliation:
Department of Physics, University of California, Berkeley, CA, 94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720 Kavli Energy Nanosciences Institute, Berkeley, CA, 94720
*
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Abstract

In this report, we demonstrate the use of helium ion milling for the controllable fabrication of nanostructures in few-layer hexagonal boron nitride (h-BN). Using the direct-write lithographic capabilities of a scanning helium ion microscope (HIM), nanopores with diameters as small as 4 nm and nanoribbons with widths of 3 – 10 nm are etched from suspended h-BN sheets. This ability to pattern h-BN sheets with high-throughput and sub-10 nm precision paves the way for future studies that make use of atomically-thin, nanostructured insulators such as those needed for nanopore sequencing and patterned van der Waals heterostructures.

Type
Articles
Copyright
Copyright © Materials Research Society 2018 

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