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MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL

Published online by Cambridge University Press:  23 May 2016

Brittany Muntifering*
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, U.S.A. Northwestern University, Evanston, IL, 60208, U.S.A.
Jianmin Qu
Affiliation:
Northwestern University, Evanston, IL, 60208, U.S.A. Tufts University, Medford, MA, 02155, U.S.A.
Khalid Hattar
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185, U.S.A.
*
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Abstract

The formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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