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Metallic β-Nb2N Films Epitaxially Grown by MBEon Hexagonal SiC Substrates

Published online by Cambridge University Press:  15 January 2016

D. Scott Katzer ,
Neeraj Nepal ,
David J. Meyer ,
Brian P. Downey ,
Virginia Wheeler ,
David F. Storm  and
Matthew T. Hardy
D. Scott Katzer*
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
Neeraj Nepal
Affiliation:
Sotera Defense Solutions, Herndon, VA, U.S.A.
David J. Meyer
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
Brian P. Downey
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
Virginia Wheeler
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
David F. Storm
Affiliation:
U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
Matthew T. Hardy
Affiliation:
National Research Council Postdoctoral Fellow residing at the U.S. Naval Research Laboratory, Washington, D.C., U.S.A.
*
*(Email: [email protected])
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Abstract

RF-plasma MBE was used to epitaxially grow 4 – 100-nm-thick metallicβ-Nb2N thin films on hexagonal SiC substrates. When theN/Nb flux ratios are greater than one, the most critical parameter forhigh-quality β-Nb2N is the substrate temperature. The X-raydiffraction (XRD) of films grown between 775 °C and 850 °Cdemonstrates pure β-Nb2N phase formation which was alsoconfirmed by X-ray photoelectron spectroscopy and transmission electronmicroscopy measurements. Using the (0002) and (21 $\bar 3$1) XRD peaks of a β-Nb2N film grown at 850°C reveals a 0.68% lattice mismatch to the 6H-SiC substrate. Thissuggests that β-Nb2N can be used for high-qualitymetal/semiconductor heterostructures that cannot be fabricated at present.

Keywords

molecular beam epitaxy (MBE)Nbnitride
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 127 - 132
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Sze, S. M. and Gummel, H. K., Solid-State Electron. 9, 751 (1966).CrossRefGoogle Scholar
Pies, W. and Weiss, A., in Key Element: N, ed. Hellwege, K. H. and Hellwege, A. M. (Springer, Heidelberg, 1978) Landolt–Börnstein: Group III Condensed Matter, Vol. 7c1.Google Scholar
Momma, K. and Izumi, F., J. Appl. Crystallogr. 44, 1272 (2011).CrossRefGoogle Scholar
Romanus, H., Teichert, G., and Spiess, L., Mater. Sci. Forum 264–268, 437 (1998).Google Scholar
Katzer, D. S., Nepal, N., Meyer, D. J., Downey, B. P., Wheeler, V. D., Storm, D. F., and Hardy, M. T., Appl. Phys. Express 8, 085501 (2015).Google Scholar
Katzer, D. S., Meyer, D. J., Storm, D. F., Nepal, N., and Wheeler, V. D., J. Vac. Sci. Technol. B 32, 02C117 (2014).Google Scholar
Shanabrook, B. V., Waterman, J. R., Davis, J. L., and Wagner, R. J., Appl. Phys. Lett. 61, 2338 (1992).Google Scholar
Heying, B., Averbeck, R., Chen, L. F., Haus, E., Riechert, H., and Speck, J. S., J. Appl. Phys. 88, 1855 (2000).Google Scholar
Farha, A. H., Er, A. O., Ufuktepe, Y., and Elsayed-Ali, H. E., Adv. Mater. Res. 445, 667 (2012).CrossRefGoogle Scholar
Sanjinés, R., Benkahoul, M., Papagno, M., Lévy, F., and Music, D., J. Appl. Phys. 99, 044911 (2006).Google Scholar
Witt, G. R., Thin Solid Films 13, 109 (1972).CrossRefGoogle Scholar
Meyerhoff, R. W., J. Electrochem. Soc. 118 997 (1971).Google Scholar
Darlinski, A. and Halbritter, J., Surf. Interface Anal. 10, 223 (1987).Google Scholar
Benkahoul, M., Ph.D. Thesis, École Polytechnique Fédérale de Lausanne (2005).Google Scholar