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Low Temperature Photoluminescence Spectroscopy of Defect and Interband Transitions in CdSexTe1-x Thin Films

Published online by Cambridge University Press:  17 July 2018

Niraj Shrestha ,
Corey R. Grice ,
Ebin Bastola Open the ORCID record for Ebin Bastola [Opens in a new window] ,
Geethika K. Liyanage Open the ORCID record for Geethika K. Liyanage [Opens in a new window] ,
Adam B. Phillips ,
Michael J. Heben ,
Yanfa Yan  and
Randy J. Ellingson
Niraj Shrestha*
Affiliation:
Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA 43606
Corey R. Grice
Affiliation:
Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA 43606
Ebin Bastola
Affiliation:
Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA 43606
Geethika K. Liyanage
Affiliation:
Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA 43606
Adam B. Phillips
Affiliation:
Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA 43606
Michael J. Heben
Affiliation:
Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA 43606
Yanfa Yan
Affiliation:
Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA 43606
Randy J. Ellingson
Affiliation:
Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA 43606
*
*(Email: [email protected])
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Abstract

We present the defect analysis by photoluminescence (PL) spectroscopy of CdSexTe1-x thin films, grown with varying Se content by a co-sputtered deposition method. We observe a peak at 1.203 eV in the CdSexTe1-x film for x = 0.21, which shifts towards higher energies with increase in laser power. This peak was assigned to a donor-to-acceptor (DAP) transition, with a measured j-shift of ∼4.7 meV/decade. Temperature dependent PL intensity measurements confirm that the observed DAP peak involves a shallow defect state of binding energy ∼34.7 meV. In contrast, a free-to-bound (FB) peak at 1.294 eV involving a shallow defect of binding energy ∼18.3 meV was observed in the CdSexTe1-x film for x = 0.14. Additionally, we observe band edge emission at 1.452 eV and 1.448 eV in CdSexTe1-x films for x = 0.14 and x = 0.21 respectively. Our analysis shows that the Se concentration not only changes the band gap energy of the resulting CdSexTe1-x alloy thin film, but also modifies the nature of the dominant observed defect emission.

Keywords

optoelectronicoptical propertiesphotovoltaicdefects
Type
Articles
Information
MRS Advances , Volume 3 , Issue 56: Energy Materials and Technologies , 2018 , pp. 3293 - 3299
Copyright
Copyright © Materials Research Society 2018 

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