Article contents
The linear relationship of spin pumping energy in a La:YIG/Pt heterostructure used in a microwave rectifier
Published online by Cambridge University Press: 14 January 2019
Abstract
La3+ doped yttrium iron garnet films have been grown on (111) oriented gadolinium gallium garnet substrates via Liquid phase epitaxy technique as a basic material for ISHE device fabrication. Pt as a material with a large spin hall angle was used as a spin detection layer. We investigated the dependence of the spin pumping effect on the power and frequency of the excitation microwaves in La:YIG/Pt bilayers by measuring the ISHE voltage. We demonstrated that the area under the ISHE curve(SISHE) across a wide power range had a nearly linear correlation with the input microwave power (Pin). The parameter SISHE can be used to describe the spin current energy in a Pt layer which can be a useful parameter for a microwave rectifier.
- Type
- Articles
- Information
- MRS Advances , Volume 4 , Issue 9: Electronic, Photonic and Magnetic Materials , 2019 , pp. 553 - 558
- Copyright
- Copyright © Materials Research Society 2019
References
References:
- 1
- Cited by