Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-23T07:30:17.577Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains

Published online by Cambridge University Press:  01 March 2016

Zon ,
Thanavorn Poempool ,
Suwit Kiravittaya ,
Suwat Sopitpan ,
Supachok Thainoi ,
Songphol Kanjanachuchai ,
Somchai Ratanathammaphan  and
Somsak Panyakeow
Zon
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Thanavorn Poempool
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Suwit Kiravittaya
Affiliation:
Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok, Thailand
Suwat Sopitpan
Affiliation:
Thailand Microelectronic Center (TMEC), National Science and Technology Agency (NSTDA), Chachoensao, Thailand
Supachok Thainoi
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Songphol Kanjanachuchai
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Somchai Ratanathammaphan
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Somsak Panyakeow*
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
*
*(Email: [email protected])
Get access

Abstract

The effects of GaAs anti-phase domains (APDs) on the growth of GaSb quantum dots (QDs) are investigated by molecular beam epitaxial growth of GaAs on Ge (001) substrate. Ge is a group-IV element and GaAs is a polar III-V compound semiconductor. Due to polar/non polar interface, GaAs APDs are formed. Initial formation of APD relates to a non-uniform growth of high index GaAs surfaces. However, due to high sticking coefficient of Sb atoms at low substrate growth temperature, GaSb QDs can be formed on the whole surface of the sample without any effects from APD boundary. The buffer layer growth temperature is one of the key roles to control the APDs formation. Therefore we tried to adjust the optimum conditions such as buffer layer thickness and growth temperature to get nearly flat sample surface with large APDs for high QDs density (∼ 8×109 dots/cm2). Low-temperature photoluminescence is conducted and GaSb QDs peak is observed at the energy range of 1.0 eV-1.3 eV.

Keywords

molecular beam epitaxy (MBE)optoelectronicnanostructure
Type
Articles
Information
MRS Advances , Volume 1 , Issue 23: Electronics and Photonics , 2016 , pp. 1729 - 1734
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Sun, C. K., Wang, G., Bowers, J. E., Brar, B., Blank, H. R., Kromer, H., and Pikuhn, M. H., Appl. Phys. Let. 68(11), 1543–1545 (1996).Google Scholar
Kawazu, T., Noda, T., Mano, T., Sakuma, Y., and Sakaki, H., Jpn. J. Appl. Phys. 54, 04DH01 (2015).Google Scholar
Jiang, C., Sakaki, H., Physica E 32, 17–20 (2006).Google Scholar
Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q., and Krier, A., Physica B 407, 1493–1496 (2012).CrossRefGoogle Scholar
Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M., and Hayne, M., J. Appl. Phys. 114, 073519 (2013).Google Scholar
Kunrugsa, M., Kiravittaya, S., Sopitpan, S., Ratanathammaphan, S., and Panyakeow, S., Journal of Crystal Growth 401, 441–444 (2014).Google Scholar
Li, Y., Salviati, G., Bongers, M. M. G., Lazzarini, L., Nasi, L., Giling, L. J., Journal of Crystal Growth 163, 195–202, (1996).CrossRefGoogle Scholar
Schulte, K. L., Wood, A. W., Reedy, R. C., Ptak, A. J., Meyer, N. T., Babcock, S. E., and Kuech, T. F., J. Appl. Phys. 113, 174903 (2013).Google Scholar
Costantini, G., Rastelli, A., Manzano, C., Songmuang, R., Schmidt, O. G., and Kern, K., Känel, H. V., Appl. Phys. Lett., 85 (23), 5673 (2004).CrossRefGoogle Scholar