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Integrating 2D electron gas oxide heterostructures on silicon usingrare-earth titanates

Published online by Cambridge University Press:  02 February 2016

Eric N. Jin ,
Lior Kornblum ,
Charles H. Ahn  and
Frederick J. Walker
Eric N. Jin*
Affiliation:
Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
Lior Kornblum
Affiliation:
Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
Charles H. Ahn
Affiliation:
Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, USA
Frederick J. Walker
Affiliation:
Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA
*
*Corresponding author: [email protected]
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Abstract

Integrating oxide heterostructures on silicon has the potential to leverage themultifunctionalities of oxide systems into semiconductor device technology. Wepresent the growth and characterization of two-dimensional electron gas (2DEG)oxide systems LaTiO3/SrTiO3 (LTO/STO) andGdTiO3/SrTiO3 (GTO/STO) on Si(001). We showinterface-based conductivity in the oxide films and measure high electrondensities ranging from ∼9 × 1013 cm-2interface-1 in GTO/STO/Si to ∼9 ×1014 cm-2 interface-1 in LTO/STO/Si. Weattribute the higher measured carrier density in the LTO/STO films to a higherconcentration of interface-bound oxygen vacancies arising from a lower oxygenpartial pressure during growth. These vacancies donate conduction electrons andresult in an increased measured carrier density. The integration of such 2DEGoxide systems with silicon provides a bridge between the diverse electronicproperties of oxide systems and the established semiconductor platform andpoints toward new devices and functionalities.

Keywords

molecular beam epitaxy (MBE)thin filmelectrical properties
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 287 - 292
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Ohtomo, A. and Hwang, H. Y., Nature 427, 423–426 (2004).Google Scholar
Shibuya, K., Ohnishi, T., Kawasaki, M., Koinuma, H., and Lippmaa, M., Jpn. J. Appl. Phys., Part 2 43, L1178 (2004).Google Scholar
Moetakef, P., Zhang, J. Y., Kozhanov, A., Jalan, B., Seshadri, R., Allen, S. J., and Stemmer, S., Appl. Phys. Lett. 98, 112110 (2011).CrossRefGoogle Scholar
Zhang, J. Y., Jackson, C. A., Chen, R., Raghavan, S., Moetakef, P., Balents, L., and Stemmer, S., Phys. Rev. B 89, 075140 (2014).CrossRefGoogle Scholar
Jackson, C. A., Zhang, J. Y., Freeze, C. R., and Stemmer, S., Nat. Commun. 5, 4258 (2014)CrossRefGoogle Scholar
Xu, P., Phelan, D., Jeong, J. S., Mkhoyan, K. A., and Jalan, B., Appl. Phys. Lett. 104, 082109 (2014).Google Scholar
Seo, S. S. A., Choi, W. S., Lee, H. N., Yu, L., Kim, K. W., Bernhard, C., and Noh, T. W., Phys. Rev. Lett. 99, 266801 (2007).Google Scholar
Chang, Y. J., Moreschini, L., Bostwick, A., Gaines, G. A., Kim, Y. S., Walter, A. L., Freelon, B., Tebano, A., Horn, K., and Rotenberg, E., Phys. Rev. Lett. 111, 126401 (2013).Google Scholar
Janotti, A., Bjaalie, L., Gordon, L., and Van de Walle, C. G., Phys. Rev. B 86, 241108 (2012).CrossRefGoogle Scholar
McKee, R. A., Walker, F. J., and Chisholm, M. F., Phys. Rev. Lett. 81, 3014–3017 (1998).CrossRefGoogle Scholar
Reiner, J. W., Kolpak, A. M., Segal, Y., Garrity, K. F., Ismail-Beigi, S., Ahn, C. H., and Walker, F. J., Adv. Mater. 22, 2919 (2010).Google Scholar
Jin, E. N., Kornblum, L., Kumah, D. P., Zou, K., Broadbridge, C. C., Ngai, J. H., Ahn, C. H., and Walker, F. J., APL Mater. 2, 116109 (2014).CrossRefGoogle Scholar
Kornblum, L., Jin, E. N., Kumah, D. P., Ernst, A. T., Broadbridge, C. C., Ahn, C. H., and Walker, F. J., Appl. Phys. Lett. 106(20), 201602 (2015).CrossRefGoogle Scholar
Kornblum, L., Jin, E. N., Shoron, O., Boucherit, M., Rajan, S., Ahn, C. H., and Walker, F. J., J. Appl. Phys. 118, 105301 (2015).Google Scholar
Gu, X., Lubyshev, D., Batzel, J., Fastenau, J. M., Liu, W. K., Pelzel, R., Magana, J. F., Ma, Q., Wang, L. P., Zhang, P., and Rao, V. R., J. Vac. Sci. Technol., B 27, 1195–1199 (2009).Google Scholar
Ohtomo, A., Muller, D. A., Grazul, J. L., and Hwang, H. Y., Appl. Phys. Lett. 80, 3922 (2002).CrossRefGoogle Scholar
Annadi, A., Huang, Z., Gopinadhan, K., Wang, X. R., Srivastava, A., Liu, Z. Q., Ma, H. H., Sarkar, T. P., Venkatesan, T., and Ariando, Phys. Rev. B 87, 201102 (2013).Google Scholar
Liu, Z. Q., Li, C. J., Lü, W. M., Huang, X. H., Huang, Z., Zeng, S. W., Qiu, X. P., Huang, L. S., Annadi, A., Chen, J. S., Coey, J. M. D., Venkatesan, T., and Ariando, Phys. Rev. X 3, 021010 (2013).Google Scholar
Fête, A., Cancellieri, C., Li, D., Stornaiuolo, D., Caviglia, A. D., Gariglio, S., and Triscone, J.-M., Appl. Phys. Lett. 106, 051604 (2015).Google Scholar