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Incorporation of Mg into thick free-standing HVPE GaN

Published online by Cambridge University Press:  04 February 2016

M.E. Zvanut ,
J. Dashdorj ,
J.A. Freitas Jr. ,
E.R. Glaser ,
J.H. Leach  and
K. Udwary
M.E. Zvanut*
Affiliation:
Physics Department, University of Alabama at Birmingham, AL 35294, USA
J. Dashdorj
Affiliation:
Physics Department, University of Alabama at Birmingham, AL 35294, USA
J.A. Freitas Jr.
Affiliation:
Naval Research Laboratory, Washington, DC 20375, USA
E.R. Glaser
Affiliation:
Naval Research Laboratory, Washington, DC 20375, USA
J.H. Leach
Affiliation:
Kyma Technologies Inc., Raleigh, NC 27617, USA
K. Udwary
Affiliation:
Kyma Technologies Inc., Raleigh, NC 27617, USA
*
*(Email: [email protected])
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Abstract

Mg, the only effective p-type dopant for nitrides, iswell-studied in thin films due to the important role the impurity plays in lightemitting diodes and high power electronics. However, there are few reports of Mgin thick free-standing GaN substrates. Here we evaluate the material quality andpoint defects in GaN grown by hydride vapor phase epitaxy (HVPE) using metallicMg as the doping source. The crystal quality is typical of commercially grownHVPE substrates, and the photoluminescence measurements reveal distinctivelysharp excitonic and shallow-donor shallow-acceptor features. Secondary ion massspectroscopy indicates total Mg concentrations between 7x1016 and6x1018 cm-3 in the four separate samples studied but,more significantly, photoluminescence and electron paramagnetic resonancespectroscopy show that the Mg is incorporated as a shallow acceptor.

Keywords

defectsIII-VMg
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 169 - 174
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Morkoc, H., “Handbook of Nitride Materials and Devices”, Wiley, 2008.CrossRefGoogle Scholar
Paskova, T., Hanser, D.A., and Evans, K.R., Proc. IEEE 98, 1324 (2010).CrossRefGoogle Scholar
Mahadik, N.A., Qadri, S.B., and Freitas, J.A. Jr, Cryst. Growth Des. 15, 291 (2015).CrossRefGoogle Scholar
Cich, M.J., Aldaz, R.I., Chakraborty, A., David, A., Grundmann, M.J., Tyagi, A., Zhang, M., Steranka, F.M., and Krames, M.R., Appl. Phys. Lett. 101, 223509 (2012).CrossRefGoogle Scholar
Kizilyalli, I.C., Edwards, A., Aktas, O., Prunty, T., and Bour, D., IEEE Trans. Elec. Dev. 62, 414 (2015).CrossRefGoogle Scholar
Kruszewski, P., Prystawko, P., Kasalynas, I., Nowakowska-Siwinska, A., Krysko, M., Plesiewicz, J., Smalc-Koziorowska, J., Dwilinski, R., Zajac, M., Kucharski, R., and Leszczynski, M., Semicond. Sci. Technol. 29, 075004–1 (2014).CrossRefGoogle Scholar
Bockowski, M., Lucznik, B., Sochacki, T., Amilusik, M., Litwin-Staszewska, E., Piotrzkowski, R., and Grzegory, I., Proc. SPIE 8625, 862509–1 (2013).Google Scholar
Usikov, A., Kovalenkov, O., Soukhoveev, V., Ivantsov, V., Syrkin, A., Dmitriev, V., Nikiforov, A.Y., Sundaresan, S.G., Jeliaszkov, S.J., and Davydov, A.V., Phys. Status. Solidi C 5, 1829 (2008).CrossRefGoogle Scholar
Glaser, E.R., Murthy, M., Freitas, J.A. Jr, Storm, D.F., Zhou, L., and Smith, D.J., Physica B 401-402, 327 (2007).CrossRefGoogle Scholar
Patel, J.L., Nicholls, J.E., and Davies, J.J., J. Phys. C: Solid State Phys. 14, 1339 (1981).CrossRefGoogle Scholar
Weil, J.A., Bolton, J.R., and Wertz, J.E., "Electron Paramagnetic Resonance", John Wiley & Sons, Inc, N.Y., 1994.Google Scholar
Freitas, J.A. Jr, Mastro, M.A., Glaser, E.R., Garces, N.Y., Lee, S.K., Chung, J.H., Oh, D.K., and Shim, K.B., J. Cryst. Growth 350, 27 (2012).Google Scholar
Kirste, R., Hoffmann, M., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., Nenstiel, C., Wagner, M., Collazo, R., Hoffmann, A., and Sitar, Z., J. Appl. Phys. 113, 103504 (2013).CrossRefGoogle Scholar
Haboeck, U., Siegle, H., Hoffmann, A., and Thomsen, C., Phys. Stat. Solidi C 0, 1710 (2003).CrossRefGoogle Scholar
Zvanut, M.E., Dashdorj, J., Willoughby, W.R., Sunay, U.R., Leach, J.H., and Udwary, K., J. Appl. Phys. submitted, 2015.Google Scholar
Monemar, B., Paskov, P.P., Pozina, G., Hemmingsson, C., Bergman, J.P., Kawashima, T., Amano, H., Akasaki, I., Paskova, T., Figge, S., Hommel, D., and Usui, A., Phys. Rev. Lett. 102, 235501 (2009).Google Scholar
Freitas, J.A. Jr, Feigelson, B.N, and Anderson, T.J., Appl. Phys. Express 6, 111001 (2013).Google Scholar
Glaser, E.R., Freitas, J.A. Jr, Shanabrook, B.V., and Koleske, D.D., Phys. Rev. B 68, 195201 (2003).Google Scholar
Matlock, D.M., Zvanut, M.E., Wang, H., Dimaio, J.R., Davis, R.F., Van Nostrand, J.E., Henry, R.L., Koleske, D., and Wickenden, A., J. Electron. Mater. 34, 34 (2005).CrossRefGoogle Scholar