Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-17T17:57:58.001Z Has data issue: false hasContentIssue false
  • English
  • Français

InAs-QDIP hybrid broadband infrared photodetector

Published online by Cambridge University Press:  16 June 2016

Chee H. Tan ,
Ian C. Sandall ,
Xinxin Zhou  and
Sanjay Krishna
Chee H. Tan*
Affiliation:
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
Ian C. Sandall
Affiliation:
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
Xinxin Zhou
Affiliation:
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, U.K.
Sanjay Krishna
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131-1070, USA.
*
*(Email: [email protected])
Get access

Abstract

We demonstrated that an InAs photodiode and a Quantum Dot Infrared Photodiode can be bonded to produce a hybrid broadband infrared photodetector. When cooled to 77 K the InAs photodiode can be used to detect wavelengths from visible to a cutoff wavelength of 3 μm while the Quantum Dot Infrared Photodiode detects wavelengths from 3 to 12 μm. The dark current and spectral response were measured on reference devices and bonded devices. Both sets of devices show similar dark current and spectral response, suggesting that no significant degradation of the devices after the bonding process.

Keywords

infrared (IR) spectroscopysemiconductingsensor
Type
Articles
Information
MRS Advances , Volume 1 , Issue 48: Electronics and Photonics , 2016 , pp. 3301 - 3306
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Krishna, S., “Quantum dots-in-a-well infrared photodetectors”, J. Phys. D: Appl. Phys. 38 2142–2150, (2005).Google Scholar
Vines, P., Tan, C. H., David, J. P. R., Attaluri, R. S., Vandervelde, T. E., Krishna, S., Jang, W. Y., Hayat, M. M., “Versatile Spectral Imaging with an Algorithm-Based Spectrometer Using Highly Tuneable Quantum Dot Infrared Photodetectors”, IEEE J. Quantum. Electron, 47, 190–197 (2011).Google Scholar
Jang, W.-Y., Hayat, M.M., Tyo, J.S., Attaluri, R.S., Vandervelde, T.E., Sharma, Y.D., Shenoi, R., Stintz, A., Cantwell, E.R., Bender, S.C., Lee, S.J., Noh, S.K., Krishna, S.. “Demonstration of bias-controlled algorithmic tuning of quantum dots in a well (DWELL) midIR detectors,” IEEE J. Quantum Electron., 45, 674–683, (2009).Google Scholar
Ker, P. J., Marshall, A. R. J., Krysa, A. B., David, J. P. R., & Tan, C. H.., “Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes.” Optics Express, 20(28), 29568–29576, (2012).Google Scholar
Marshall, A. R., Ker, P. J., Krysa, A., David, J. P., & Tan, C. H. ,“High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.” Opt Express, 19(23), 23341–23349, (2011).Google Scholar
Dimroth, F., et al. “Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency”, Progress in Photovoltaics: Research and Applications, 22, 277, (2014)Google Scholar
Justice, J., Bowe, C., Meitl, M., Mooney, M.B., Gubbins, M.A. and Corbett, B., “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers”, Nature Photonics, 6, 610 (2012)Google Scholar
http://www.aml.co.uk/index.php/bondcentre/ Google Scholar
Marshall, A. R. J., Tan, C. H., Steer, M. J., & David, J. P. R, “Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes,” Applied Physics Letters, 93, 111107 (2008).Google Scholar
Hong, G., Holmes, A. S., Heaton, M.E., “SU8 resist plasma etching and its optimization”, Microsystem Technologies 10, 357–359 (2004).CrossRefGoogle Scholar