Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-22T20:43:34.877Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of glycerol on Zinc Oxide based thin film transistors withIndium Molybdenum Oxide electrodes

Published online by Cambridge University Press:  13 January 2016

Mateusz Tomasz Mądzik ,
Elangovan Elamurugu ,
Raquel Flores  and
Jaime Viegas
Mateusz Tomasz Mądzik*
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates.
Elangovan Elamurugu
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates.
Raquel Flores
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates.
Jaime Viegas
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates.
*
*(Email: [email protected])
Get access

Abstract

Thin-film transistors (TFT) were fabricated at a room-temperature (RT) with zincoxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. To isolate thegate oxide and gate electrode influence on the device performance, common gateconfiguration on a commercial substrate with thermal SiO2 (100 nm)was selected. A threshold voltage (V Th) of 10 V and I ON/I OFF ratio of 1 × 10-5 were obtained. Once the referencedata was taken transistors were exposed to glycerol. Temporary changes in devicecharacteristics were observed due to the influence of glycerol, a lowconductivity medium. To exclude the possibility of sugar alcohol being the mainconductor, measurement on dummy transistor electrode was performed retaining thedistance between probes. The TFT device under test revealed ten times higherdrain current but also a change in threshold voltage and leakage current.Transistors under glycerol influence were always open with the positive gatebias.

Keywords

organicmicroelectronicscatalytic
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 265 - 268
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Elamurugu, E., Saji, K. J., Parhiban, S., Goncalves, G., Barquinha, P., Martins, R., Fortunato, E., IEEE Elect. Dev. Lett., 32 (2011) 1391–1393.Google Scholar
Walker, B., Pradhan, A. K., Xiao, B., Solid-State Electronics, 111 (2015) 58–61.Google Scholar
Elangovan, E., Parthiban, S., Gonçalves, G., Franco, N., Alves, E., Martins, R., Fortunato, E., European Physics Letters 97 (2012) 36002.Google Scholar
Bagheri, M., Khodadabi, A. A., Mahjoub, a. R., Mortazavi, Y., Sensors and Actuators B 223 (2016) pp. 576–585.CrossRefGoogle Scholar
Bienholz, A., Schwab, F., Claus, P., Green Chemistry, 12 (2010) 290–295.CrossRefGoogle Scholar
Li, G., Xie, D., Feng, T., Xu, J., Zhang, X., Ren, T., Solid-State Electronics, 95 (2014) 32–35.CrossRefGoogle Scholar