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High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  19 January 2017

W. Zhu ,
B. Mitchell ,
D. Timmerman ,
A. Koizumi ,
T. Gregorkiewicz  and
Y. Fujiwara
W. Zhu
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
B. Mitchell
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan Department of Physics, West Chester University, West Chester, PA, 19383, USA
D. Timmerman
Affiliation:
Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
A. Koizumi
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
T. Gregorkiewicz
Affiliation:
Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
Y. Fujiwara*
Affiliation:
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
*
*(Email: [email protected])

Abstract

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A modification of the growth structure of Eu-doped GaN (GaN:Eu) from a monolayer to a multilayer structure (MLS) consisting of alternating GaN and GaN:Eu, was shown to enhance the emission properties. Similarly, lowering the growth temperature of the GaN:Eu to 960°C nearly doubled the photoluminescence emission intensity, and also enhanced device performance. Hence, to design a higher power GaN:Eu red LED, a multilayer structure consisting of 40 pairs of alternating GaN and GaN:Eu was grown at 960°C. This combination resulted in the fabrication of an LED with a maximum output power of 110 μW, which is 5.8 times more output power per GaN:Eu layer thickness as compared to the best previously reported device. Moreover, it was found that the MLS sample grown at 960°C maintained a high crystal quality with low surface roughness, which enabled an increase in the number of pairs from 40 pairs to 100 pairs. An MLS-LED consisting of 100 pairs of alternating GaN/GaN:Eu layers was successfully fabricated, and had a maximum output power of 375 μW with an external quantum efficiency of 4.6%. These are the highest values reported for this system.

Keywords

III-Vdevicesnanostructure
Type
Articles
Information
MRS Advances , Volume 2 , Issue 3: Electronics, Magnetics and Photonics , 2017 , pp. 159 - 164
Copyright
Copyright © Materials Research Society 2017 

References

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