Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-23T13:06:14.301Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of HfSixOy/ HfO2 Thin Film onSi Substrate by Microwave Generated Remote Plasma Assisted Atomic LayerDeposition Techniques

Published online by Cambridge University Press:  22 February 2016

Hiroki Ishizaki
Hiroki Ishizaki*
Affiliation:
Saitama Institute of technology, 1690 Fusaiji, Fukaya, Saitama, 369-0293, Japan
*
*(Email: [email protected])
Get access

Abstract

In this paper, we will report on the formation of HfSixOylayer on an HF-last Si(100) substrate by atomic layer deposition fromtetrakis(dimethylamido)hafnium (TDMAH) and atomic oxygen generated by amicrowave remote plasma. Transmission electron microscopy observations ofHfSixOy /Si structures deposited at 100 and300℃ revealed that 3∼5-nm-thick amorphousHfSixOy layers were unintentionally formed precededthe growth of crystalline Hf-rich HfSixOy layers. Tounderstand the mechanism of this unintentional growth ofHfSixOy, the depth profiles of Hf, O and Si elements weremeasured by X-ray photoelectron spectroscopy. It was found that Hf atoms deeplydiffused into the Si substrate. From these results, suppression of Hf indiffusion to the Si substrate must be important to reduce the capacitanceequivalent thickness of the metal-oxide-semiconductor capacitors. The roles ofTDMAH and plasma-generated oxygen radical on the enhanced diffusion of Hf willbe discussed in detail.

Keywords

ceramicdevicesnanostructure
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 311 - 316
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Chen, M. J., Shin, Y. T., Wu, M. K. and Tsai, F. Y., J. Appl. Phys., 101, 033130 (2007).Google Scholar
Kobayashi, M., Thareja, G., Ishibashi, M., Sun, Y., Griffin, P., McVittie, J., Pianetta, P., Saraswat, K., and Nishi, Y., J. Appl. Phys. 106, 104117(2009).CrossRefGoogle Scholar
Moulder, J. F., Stickle, W. F., Sobol, P. E. and Bomben, K. D., “Handbook of X-ray Photoelectron Spectroscopy”, ed. Chastain, J., (Perkin-Elmer Corporation Physical Electronics Division, 1992) pp. 40–169.Google Scholar
He, G., Chen, X. and Sun, Z., Surface Science Reports, 68, 68. (2013)Google Scholar
Kukli, K., Pilvi, T., Ritala, M., Sajavaara, T., Lu, J. and Leskela, M., Thin Solid Films 491, 328 (2005).CrossRefGoogle Scholar
Cho, M., Park, H. B., Lee, S. W., Hwang, C. S, Jang, G. H. and Jeong, J., Applied Phys. Lett. 83, 5503(2003).Google Scholar
Langereis, E., Keijmel, J., van de Sanden, M. C. M., and Kessels, W. M. M., Appl. Phys. Lett. 92, 231904(2008).Google Scholar
Fukuda, Y., Ishizaki, H., Otani, Y., Yamamoto, C., Yamanaka, J., Sato, T., Takamatsu, T., Okamoto, H. and Narita, H., Appl. Phys. Lett. 102, 132904(2013)Google Scholar
Ogawa, A., Iwamoto, K., Ota, H., Moria, Y., Ikeda, M., Nabatame, T. and Toriumi, A.,Microelectronic Engineering, 84, 1861(2007)CrossRefGoogle Scholar