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GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties

Published online by Cambridge University Press:  10 December 2015

Thanavorn Poempool ,
Zon ,
Suwit Kiravittaya ,
Suwat Sopitpan ,
Supachok Thainoi ,
Songphol Kanjanachuchai ,
Somchai Ratanathamaphan  and
Somsak Panyakeow
Thanavorn Poempool
Affiliation:
Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Zon
Affiliation:
Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Suwit Kiravittaya
Affiliation:
Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000, Thailand
Suwat Sopitpan
Affiliation:
Thailand Microelectronics Center (TMEC), National Electronics and Computer Center, Chachoengsao 24000, Thailand
Supachok Thainoi
Affiliation:
Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Songphol Kanjanachuchai
Affiliation:
Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Somchai Ratanathamaphan
Affiliation:
Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Somsak Panyakeow*
Affiliation:
Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
*
*Corresponding author. Tel.: +662-218-6524; Fax: +662-251-8991, E-mail address: [email protected]

Abstract

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GaSb/GaAs and InSb/GaAs material systems can create type-II quantum nanostructures which provide interesting electronic and optical properties such as having long carrier life time, low carriers-recombination rate, and emitting/absorbing low photon energy. These characteristics of type-II nanostructures can be applied for infrared or gas detection devices, for memory devices and even for novel intermediate band solar cells. In contrast, lattice mismatches of GaSb/GaAs and InSb/GaAs material system are 7.8% and 14.6%, respectively, which need some specific molecular beam epitaxial (MBE) growth conditions for quantum nanostructure formation via Stranski–Krastanov growth mode.

In this paper, the growth of self-assembled GaSb and InSb quantum nanostructures on (001) GaAs substrate by using MBE was reported. The surface morphology of these two quantum nanostructures and their optical properties were characterized by atomic force microscopy and photoluminescence (PL). The experimental results were compared between these two quantum nanostructures. Due to the lattice mismatch in each material system and the difference in sticking coefficient of Ga- and In-atoms during epitaxial growth, we obtain GaSb/GaAs quantum dots (QDs) with a density ∼1010 dots/cm2 and InSb/GaAs QDs with a density of ∼108 dots/cm2. The facet analysis of individual quantum nanostructure in each material system reveals that GaSb/GaAs QD has a dome-like shape with nearly isotropic property while InSb QDs form a rectangular-like shape with elongation along [110]-direction showing a strong anisotropic property.

Low temperature PL spectra from capped GaSb and InSb quantum nanostructures show the energy peaks at 1.08-1.11 and 1.16-1.17 eV, respectively. The variations of PL peaks as a function of both temperature and excitation power are investigated. PL peak shows clear blue shift when excitation power is increased. This work manifests a possibility to use both GaSb and InSb quantum nanostructures for nanoelectronic and nanophotonic applications.

Keywords

III-Vmolecular beam epitaxy (MBE)Sb
Type
Articles
Information
MRS Advances , Volume 1 , Issue 23: Electronics and Photonics , 2016 , pp. 1677 - 1682
Copyright
Copyright © Materials Research Society 2015 

References

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