Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-22T20:51:16.707Z Has data issue: false hasContentIssue false
  • English
  • Français

GaN-on-Diamond HEMTs with 11W/mm Output Power at10GHz

Published online by Cambridge University Press:  07 March 2016

P.C. Chao ,
Kanin Chu ,
Jose Diaz ,
Carlton Creamer ,
Scott Sweetland ,
Ray Kallaher ,
Craig McGray ,
Glen D. Via  and
John Blevins
P.C. Chao*
Affiliation:
BAE Systems, Nashua, NH 03061, U.S.A.
Kanin Chu
Affiliation:
BAE Systems, Nashua, NH 03061, U.S.A.
Jose Diaz
Affiliation:
BAE Systems, Nashua, NH 03061, U.S.A.
Carlton Creamer
Affiliation:
BAE Systems, Nashua, NH 03061, U.S.A.
Scott Sweetland
Affiliation:
BAE Systems, Nashua, NH 03061, U.S.A.
Ray Kallaher
Affiliation:
Modern Microsystems, Inc., Silver Spring, MD 20904, U.S.A.
Craig McGray
Affiliation:
Modern Microsystems, Inc., Silver Spring, MD 20904, U.S.A.
Glen D. Via
Affiliation:
AFRL/RYDD, Wright-Patterson AFB, OH 45433, U.S.A.
John Blevins
Affiliation:
AFRL/RYDD, Wright-Patterson AFB, OH 45433, U.S.A.
*
*(Email: [email protected])
Get access

Abstract

A new device-first low-temperature bonded gallium nitride (GaN)-on-diamondhigh-electronic mobility transistor (HEMT) technology with state-of-the-art,radio frequency (RF) power performance is described. In this process, thedevices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial waferand were subsequently separated from the SiC and bonded onto ahigh-thermal-conductivity diamond substrate. Thermal measurements showed thatthe GaN-on-diamond devices maintained equivalent or lower junction temperaturesthan their GaN-on-SiC counterparts while delivering more than three-times higherRF power within the same active area. Such results demonstrate that the GaNdevice transfer process is capable of preserving intrinsic transistor electricalperformance while taking advantage of the excellent thermal properties ofdiamond substrates. Preliminary step-stress and room-temperature, steady-statelife testing shows that the low-temperature bonded GaN-on-diamond device has noinherently reliability limiting factor. GaN-on-diamond is ideally suited towideband electronic warfare (EW) power amplifiers as they are the most thermallychallenging due to continuous wave (CW) operation and the reduced power-addedefficiency obtained with ultra-wide bandwidth circuit implementations.

Keywords

diamondelectrical propertiesthermal conductivity
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 147 - 155
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Wu, Y.-F., Moore, M., Saxler, A., Wisleder, T., and Parikh, P., “40-W/mm double field-plated GaN HEMTs,” Proc. 64th Device Res. Conf., State College, PA, USA, 151 (2006).Google Scholar
Wasserbauer, J., Falli, F., Babic, D., Francis, D. and Ejeckam, F., “Diamond cools high-power transistors,” Compound Semiconductor, 25 (2007).Google Scholar
Chao, P.C., Chu, K., and Creamer, C., “A New High-power GaN-on-diamond HEMT with low-temperature bonded substrate technology,” Int. Conf. on Compound Semiconductor Manuf. Tech., New Orleans, LA, 179 (2013).Google Scholar
Cho, J., Chao, P.C., Asheghi, M. and Goodson, K., “Phonon conduction normal to polysilicon films on diamond,” presented at ASME 4th Micro/Nanoscale Heat & Mass Transfer (MNHMT) International Conf., Hong Kong, China (2013).Google Scholar
Dumka, D.C., Lee, C., Tserng, H.Q., Saunier, P. and Kumar, R., “AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz,” Electron Lett., 40, 1023 (2004).Google Scholar