Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-10T22:30:48.383Z Has data issue: false hasContentIssue false
  • English
  • Français

Evaluation of Polishing-Induced Subsurface Damage of 4H-SiC (0001) by Cross-Sectional Electron Backscattered Diffraction and Synchrotron X-Ray Micro-Diffraction

Published online by Cambridge University Press:  09 June 2016

Koji Ashida ,
Daichi Dojima ,
Yasunori Kutsuma ,
Satoshi Torimi ,
Satoru Nogami ,
Yasuhiko Imai ,
Shigeru Kimura ,
Jun-ichiro Mizuki ,
Noboru Ohtani  and
Tadaaki Kaneko
Koji Ashida
Affiliation:
School of Science and Technology, Kwansei Gakuin University, 2-1, Gakuen, Sanda, Hyogo, 669-1337, Japan Research Fellow of Japan Society for the Promotion of Science
Daichi Dojima
Affiliation:
School of Science and Technology, Kwansei Gakuin University, 2-1, Gakuen, Sanda, Hyogo, 669-1337, Japan
Yasunori Kutsuma
Affiliation:
School of Science and Technology, Kwansei Gakuin University, 2-1, Gakuen, Sanda, Hyogo, 669-1337, Japan
Satoshi Torimi
Affiliation:
Toyo-Tanso Corporation, 2181-2, Nakahime, Ohnohara, Kanonji, Kagawa,769-1612, Japan
Satoru Nogami
Affiliation:
Toyo-Tanso Corporation, 2181-2, Nakahime, Ohnohara, Kanonji, Kagawa,769-1612, Japan
Yasuhiko Imai
Affiliation:
JASRI/SPring-8, 1-1-1, Koto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan
Shigeru Kimura
Affiliation:
JASRI/SPring-8, 1-1-1, Koto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, Japan
Jun-ichiro Mizuki
Affiliation:
School of Science and Technology, Kwansei Gakuin University, 2-1, Gakuen, Sanda, Hyogo, 669-1337, Japan
Noboru Ohtani
Affiliation:
School of Science and Technology, Kwansei Gakuin University, 2-1, Gakuen, Sanda, Hyogo, 669-1337, Japan
Tadaaki Kaneko*
Affiliation:
School of Science and Technology, Kwansei Gakuin University, 2-1, Gakuen, Sanda, Hyogo, 669-1337, Japan
*
*(Email: [email protected])
Get access

Abstract

The range of polishing-induced subsurface damage remaining in a commercially available production grade 4H-SiC (0001) epi-ready substrate was evaluated by the observation from the (-1100) cleavage plane using two kinds of highly strain-sensitive characterization methods. Firstly, the analysis using electron backscattered diffraction (EBSD) with a submicron spatial resolution was conducted on the exposed cross sectional plane. Then, for the further quantitative evaluation excluding the influence of roughness or contamination of the cleavage plane, a synchrotron X-ray micro-diffraction experiment was carried out. The range of the subsurface damage evaluated in those experiments was ensured by confirming none of additional strain inserted at the cleavage, as compared with the damage-free substrate prepared by high temperature thermal etching. As a result, the depth of the residual strained region below polishing-induced scratches at the surface was estimated to be in the range of a few microns, which is much deeper than the previously reported value of 100 nm by cross-sectional transmission electron microscopy. It suggests a potential of EBSD for the conventional tool to characterize even a small amount of strain in SiC single crystal.

Keywords

x-ray diffraction (XRD)scanning electron microscopy (SEM)stress/strain relationship
Type
Articles
Information
MRS Advances , Volume 1 , Issue 55: Electronics and Photonics , 2016 , pp. 3697 - 3702
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ishikawa, Y. et al., Mater. Sci. Forum, Vols. 717-720, pp 383–386 (2012).Google Scholar
Masumoto, K. et al., Materials 7, 7010 (2014).Google Scholar
Sasaki, M. et al., Mater. Sci. Forum, vols. 778-780, pp 398–401 (2014).Google Scholar
Sako, H. et al., Mater. Sci. Forum vols. 778-780, pp 370–373 (2014).Google Scholar
Vicente, P. et al., Mater. Sci. Eng. B. 80, 348–351 (2001).Google Scholar
Sanchez, E. K. et al., J. Elec, Soc. 149, G131–G136 (2002).CrossRefGoogle Scholar
Dingley, D. J. et al., J. Elec. Microsc. 59 (supplement), S155–S163 (2010).Google Scholar
Wilkinson, A. J. et al., Materialstoday 15, 366–376 (2012).Google Scholar
Syvajarvi, M. et al., J. Cryst. Growth 208, 409–415 (2000).CrossRefGoogle Scholar
Ushio, S. et al., Mater. Sci. Forum, vols. 717-720, pp 573–576 (2012).Google Scholar
Imai, Y., et al., AIP Conf. Proc. 1221, 30 (2010).Google Scholar
Zimmermann, U. et al., Mater. Sci. Forum, vols. 433-436, pp 937–940 (2003).Google Scholar
Trager-Cowan, C. et al., Phys. Rev. B., 75, 085301 (2007).Google Scholar