Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-23T00:14:36.519Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

Published online by Cambridge University Press:  13 February 2017

Jing Lu ,
Jie Su ,
Ronald Arif ,
George D. Papasouliotis  and
Ajit Paranjpe
Jing Lu*
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
Jie Su
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
Ronald Arif
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
George D. Papasouliotis
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
Ajit Paranjpe
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA.
*
*(Email: [email protected])
Get access

Abstract

InAlN films and InAlN/GaN high electron mobility transistor (HEMT) structures were demonstrated on 150mm <111> Si using Veeco’s Propel single wafer metal-organic chemical vapor deposition (MOCVD) system. Smooth surfaces with root mean square (rms) roughness of 0.68 nm were observed in a 5x5 μm2 atomic force microscope (AFM) scan. X-ray diffraction (XRD) analysis shows well-defined layer peaks and fringes, indicating good structural quality and abrupt layer interfaces. Thickness uniformity of InAlN is 0.87%, 1σ, for a 7-point XRD measurement across the 150 mm wafer. Secondary ion mass spectrometry (SIMS) analysis confirms the uniform indium depth profile and the presence of abrupt layer interfaces. Negligible Ga (< 100 ppm, atomic) incorporation was detected in the InAlN bulk film. Film sheet resistance of 230Ω/sq, charge of 2.1×1013/cm2, and mobility of 1270 cm2/V.s were measured on a prototypical InAlN/GaN HEMT structure comprising a 10 nm-thick, 17% indium, InAlN barrier.

Keywords

metalorganic depositionIII-Vthin film
Type
Articles
Information
MRS Advances , Volume 2 , Issue 5: Electronics, Magnetics and Photonics , 2017 , pp. 329 - 334
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kuzmik, J., IEEE Electron Device Lett. Vol. 22, No. 11, pp. 510 (2001).Google Scholar
Zhu, J.J., et al, Journal of Crystal Growth 348, 25–30 (2012).CrossRefGoogle Scholar
Choi, S., et al, Journal of Crystal Growth 388, 137–142 (2014).Google Scholar
Taylor, E., et al, Journal of Crystal Growth 408, 97–101 (2014).Google Scholar
Zhou, Lin, et al, Phys. Status Solidi C 7, No. 10, 2436–2439 (2010).Google Scholar
Ideda, N., et al, Proc. IEEE 98, 1151 (2010).Google Scholar
Mishra, U., et al, Proc. IEEE 96(2), 287 (2008).Google Scholar
Hove, M., et al, IEEE Electron Device Letters Vol. 33, Issue: 5, 667–669 (2012).CrossRefGoogle Scholar
Su, Jie, et al, Phys. Status Solidi A 213, No. 4, 856–860 (2016).Google Scholar