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Emission, Defects and Structure of ZnO Nanocrystals obtained by Electrochemical method

Published online by Cambridge University Press:  11 May 2017

Tetyana Torchynska ,
Brahim El Filali ,
Georgiy Polupan  and
Lyudmula Shcherbyna
Tetyana Torchynska*
Affiliation:
Instituto Politécnico Nacional, ESFM, México D.F.07738, MEXICO
Brahim El Filali
Affiliation:
Instituto Politécnico Nacional, UPIITA, México D.F.07320, MEXICO
Georgiy Polupan
Affiliation:
Instituto Politécnico Nacional, ESIME, México D.F.07738, MEXICO
Lyudmula Shcherbyna
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics at NASU, Kyiv, 03028, UKRAINE
*
*(Email: [email protected])
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Abstract

The impact of different annealing temperatures on the crystal structure, emission and radiative defects in ZnO nanocrystals (NCs) has been investigated by means of the scanning electron microscopy (SEM), Energy dispersion spectroscopy (EDS), X-ray diffraction (XRD) and photoluminescence (PL) techniques. ZnO NCs were prepared by the anodization of zinc sheets in an electrolyte and thermal annealed at the various temperatures: 200, 240, 280, 320, 360 and 400°C for two hours in ambient air. The XRD study indicates that ZnO NCs are characterized by the hexagonal wurtzite structure.

The study of annealing temperature impact on the morphology of ZnO NCs has shown that the NC size enlarges and the film crystallinity improves with increasing annealing temperatures from 200°C up to 400°C. But in the temperature range of 360-400oC the dissolution of oxygen atoms raises essentially in ZnO NC films as it follows from EDS data. Simultaneously, the near band edge (NBE) emission intensity falls down, XRD parameters of ZnO NCs change and the intensity of defect related orange and green PL bands increases owing to increasing the defect concentrations. The optimal temperatures for the ZnO NC oxidation, together with keeping the high NBE emission intensity, are estimated as 360 °C. The nature of native defects responsible for orange and green emissions in ZnO NCs has been discussed.

Keywords

photoemissiondefectsnanostructure
Type
Articles
Information
MRS Advances , Volume 2 , Issue 43: Electronic Devices and Materials , 2017 , pp. 2343 - 2348
Copyright
Copyright © Materials Research Society 2017 

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