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The electron transport that occurs within wurtzite zinc oxide and the application of stress

Published online by Cambridge University Press:  11 May 2017

Poppy Siddiqua ,
Michael S. Shur  and
Stephen K. O’Leary
Poppy Siddiqua
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
Michael S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, U.S.A.
Stephen K. O’Leary*
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
*
*(Email: [email protected])
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Abstract

We examine how stress has the potential to shape the character of the electron transport that occurs within ZnO. In order to narrow the scope of this analysis, we focus on a determination of the velocity-field characteristics associated with bulk wurtzite ZnO. Monte Carlo simulations of the electron transport are pursued for the purposes of this analysis. Rather than focusing on the impact of stress in of itself, instead we focus on the changes that occur to the energy gap through the application of stress, i.e., energy gap variations provide a proxy for the amount of stress. Our results demonstrate that stress plays a significant role in shaping the form of the velocity-field characteristics associated with ZnO. This dependence could potentially be exploited for device application purposes.

Keywords

stress/strain relationshiptransportationsimulation
Type
Articles
Information
MRS Advances , Volume 2 , Issue 48: Characterization, Theory and Modeling , 2017 , pp. 2627 - 2632
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Morkoç, H. and Őzgűr, Ű., Zinc oxide: Fundamentals, materials and device technology (Wiley, Weinheim, 2009).Google Scholar
Vanheusden, K., Warren, W. L., Seager, C. H., Tallant, D. R., Voigt, J. A., and Gnade, B. E., J. Appl. Phys. 79, 7983–7990 (1996).Google Scholar
Ferry, D. K., Phys. Rev. B 12, 2361–2369 (1975).Google Scholar
Albrecht, J. D., Ruden, P. P., Limpijumnong, S., Lambrecht, W. R. L., and Brennan, K. F., J. Appl. Phys. 86, 6864–6867 (1999).CrossRefGoogle Scholar
O’Leary, S. K., Foutz, B. E., Shur, M. S., and Eastman, L. F., Solid State Commun. 150, 2182–2185 (2010).Google Scholar
Siddiqua, P., Shur, M. S., and O’Leary, S. K., MRS Adv. 1(40), 2777–2782 (2016).Google Scholar
Hadi, W. A., O’Leary, S. K., Shur, M. S., and Eastman, L. F., Solid State Commun. 151, 874–878 (2011).CrossRefGoogle Scholar
Fischetti, M. V. and Laux, S. E., J. Appl. Phys. 80, 2234–2252 (1996).Google Scholar
Arulkumaran, S., Ng, G. I., Kumar, C. M. M., Ranjan, K., Teo, K. L., Shoron, O. F., Rajan, S., Dolmanan, S. B., and Tripathy, S., Appl. Phys. Lett. 106, 053502–1-5 (2015).CrossRefGoogle Scholar
Kane, E. O., Phys, J.. Chem. Solids 1, 249–261 (1957).Google Scholar
Qin, G., Zhang, G., Yang, J., Yu, G., Fu, H., and Ji, F., J. Wuhan Univ. Technol., Mater. Sci.. Ed. 28, 48–51 (2013).CrossRefGoogle Scholar
Siddiqua, P., Hadi, W. A., Shur, M. S., and O’Leary, S. K., J. Mater. Sci.: Mater. Electron. 26, 4475–4512 (2015).Google Scholar