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Effect of UV Laser Irradiation on the properties of NiO films andZnO/NiO Heterostructures

Published online by Cambridge University Press:  03 February 2016

Srikanth Itapu ,
Kamruzzaman Khan  and
Daniel G. Georgiev
Srikanth Itapu*
Affiliation:
Department of EECS, University of Toledo, Toledo, OH 43606, U.S.A.
Kamruzzaman Khan
Affiliation:
Department of EECS, University of Toledo, Toledo, OH 43606, U.S.A.
Daniel G. Georgiev
Affiliation:
Department of EECS, University of Toledo, Toledo, OH 43606, U.S.A.
*
*(Email: [email protected])
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Abstract

The present work accentuates the effect of UV laser irradiation on theconductivity of nickel oxide (NiO) thin films, deposited at various temperaturesby radio-frequency reactive sputtering of Ni in oxygen containing atmosphere.The effect of UV irradiation on zinc oxide – nickel oxideheterostructures, obtained by sputtering, was examined as well. It was foundthat the resistivity of NiO changes from 12 Ω-cm to 0.62Ω-cm, and the majority carrier concentration from3.95x1017 holes/cm3 to 4.22x1020electrons/cm3. The current-voltage (I-V) characteristics of theZnO/NiO heterostructure shows an improved p-n diode behavior with the forwardbias current increasing for the laser-irradiated ZnO/NiO compared to theas-deposited stack. The observed improvement in diode-like behavior suggeststhat laser irradiation can be an important technique to controllably change thestructural, electrical and optical properties of metal oxide thin films.

Keywords

defectsHall effectlaser-induced reaction
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 293 - 298
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Ji, L.F., Jiang, Y., Wang, W. and Yu, Z., Appl. Phy. Lett. 85, 1577 (2004).CrossRefGoogle Scholar
Ji, Y. and Jiang, Y., Appl. Phy. Lett. 89, 221103 (2006).CrossRefGoogle Scholar
Chang, L., Jiang, Y. and Ji, L.F., Appl. Phy. Lett. 90, 082505 (2007).CrossRefGoogle Scholar
Long, H., Fang, G., Huang, H., Mo, X., Xia, W., Dong, B., Meng, X. and Zhao, X., Appl. Phy. Lett. 95, 013509 (2009).CrossRefGoogle Scholar
Nakamura, Y., Ishikura, Y., Morita, Y., Takagi, H. and Fujitsu, S., Sens. & Actuators B: Chem. 187, 578 (2013).CrossRefGoogle Scholar
Betancur, R., Maymo, M., Elias, X., Vuong, L.T. and Martorell, J., Solar Energy Mat. & Solar Cells 95, 735 (2011).CrossRefGoogle Scholar
Gupta, P., Dutta, T., Mal, S. and Narayan, J., Appl. Phy. Lett. 111, 013706 (2012).CrossRefGoogle Scholar
Tyagi, M., Tomar, M. and Gupta, V., IEEE Elec. Dev. Lett, 34, 81 (2013).CrossRefGoogle Scholar
Liu, S., Liu, S.L., Long, Y.Z., Liu, L.Z., Zhang, H.D., Zhang, J.C., Han, W.P. and Liu, Y.C., Appl. Phy. Lett. 104, 042105 (2014).CrossRefGoogle Scholar
Khan, E.H., Langford, S.C. and Dickinson, J.T., Langmuir 25, 1930 (2009).CrossRefGoogle Scholar
Janotti, A. and Van De Walle, C.G., Rep. Prog. Phys. 72, 126501 (2009).CrossRefGoogle Scholar
Zhao, Y. and Jiang, Y., Appl. Phy. Lett. 103, 114903 (2008).CrossRefGoogle Scholar
Lu, H., Tu, Y., Lin, X., Fang, B., Luo, D. and Laaksonen, A., Mat. Lett. 64, 2072 (2010).CrossRefGoogle Scholar
Wen, X.M., Xu, P. and Lukins, P.B., J. Luminescence 106, 1 (2004).CrossRefGoogle Scholar
Cho, D.Y., Song, S.J., Kim, U.K., Kim, K.M., Lee, H.K. and Hwang, C.S., J. Mat. Chem. C1, 4334 (2013).Google Scholar
Kim, D.S. and Lee, H.C., J. Appl. Phys. 112, 034504 (2012).CrossRefGoogle Scholar
Molaei, R., Bayati, R. and Narayan, J., Cryst. Growth Des. 13, 5459 (2013).CrossRefGoogle Scholar
Molaei, R., Bayati, M.R., Alipour, H.M., Nori, S. and Narayan, J., J. Appl. Phys. 113, 233708 (2013).CrossRefGoogle Scholar
Tsai, S.Y., Hon, M.H. and Lu, Y.M., Solid State Elect. 63, 37 (2011).CrossRefGoogle Scholar