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Doping of Two-Dimensional Semiconductors: A Rapid Review and Outlook

Published online by Cambridge University Press:  21 October 2019

Kehao Zhang  and
Joshua Robinson
Kehao Zhang*
Affiliation:
Department of Materials Science and Engineering and Center for Two Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA16802USA
Joshua Robinson
Affiliation:
Department of Materials Science and Engineering and Center for Two Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA16802USA Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, PA16802USA 2-Dimensional Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA16802USA
*
*(Email: [email protected])
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Abstract

Doping, as a primary technique to modify semiconductor transport, has achieved tremendous success in the past decades. For example, boron and phosphorus doping of Si modulates the dominant carrier type between p-type and n-type, serving as the backbone for the modern microelectronic technologies. Doped III-V semiconducting systems exhibit phenomenal optoelectronic properties. Magnesium doped gallium nitride plays an important role to build efficient blue light-emitting diode (LED), which won Nobel Prize in physics in 2014. The rise of two-dimensional (2D) materials sheds light on their potential in next generation electronic, optoelectronic, and quantum applications. These properties can further be controlled via doping of 2D materials, however, many challenges still remain in this field. Here, we present a rapid review on the recent achievements and challenges in the metastable and substitutional doping of 2D materials, followed by providing an outlook on integrating 2D materials into more advanced electronic architectures.

Keywords

2D materialselectrical propertiesoptoelectronic
Type
Review Article
Information
MRS Advances , Volume 4 , Issue 51-52: Snapshot reviews in Materials Advances 2019 , 2019 , pp. 2743 - 2757
Copyright
Copyright © Materials Research Society 2019 

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