Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-26T07:07:44.415Z Has data issue: false hasContentIssue false

Discovery of Q-BN and Direct Conversion of h-BN into c-BN and Formation of Epitaxial c-BN/Diamond Heterostructures

Published online by Cambridge University Press:  20 June 2016

Jagdish Narayan*
Affiliation:
Department of Materials Science and Engineering, Centennial Campus North Carolina State University, Raleigh, NC 27695-7907, USA
Anagh Bhaumik
Affiliation:
Department of Materials Science and Engineering, Centennial Campus North Carolina State University, Raleigh, NC 27695-7907, USA
*
*Correspondence to: [email protected]
Get access

Abstract

We review the discovery of a new phase BN (named Q-BN) which has been created by nanosecond laser melting in the super undercooled state and quenching rapidly with rates exceeding several billion degrees per second. This phase, sequel to our earlier discovery of Q-Carbon, has amorphous structure from which phase-pure c-BN is formed in the form of nanodots, microcrystals, nanoneedles, and microneedles. Large-area single c-BN are formed by providing a template for epitaxial growth during quenching of super undercooled liquid BN. Since there is a rapid crystal growth from liquid, both n- and p-type dopants can be incorporated into electrically active substitutional sites with concentrations exceeding solubility limits through the phenomenon of solute trapping. We have grown diamond on c-BN by pulsed laser deposition of carbon at 500°C without the presence of hydrogen, and created c-BN and diamond epitaxial composites. We discuss the mechanism of epitaxial c-BN and diamond growth on lattice matching c-BN template under pulsed laser evaporation of amorphous carbon. This discovery on direct conversion of h-BN into phase-pure c-BN at ambient temperatures and pressures in air, represents a seminal contribution to the field of boron nitride, which is quite complementary to our discovery of graphite to diamond conversion. We have bypassed thermodynamics with the help of kinetics and time control. This research represents a major breakthrough for c-BN and diamond based high-power electronic and photonic devices, and host of other applications related to high-speed machining, deep-sea drilling, field-emission displays and biomedical applications.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Samantaray, C.B. and Singh, R.N., Int. Mater. Rev. 50, 313 (2013).CrossRefGoogle Scholar
Mirkarimi, P.B., McCarty, K.F., and Medlin, D.L., Mater. Sci. Eng. R Reports 21, 47 (1997).CrossRefGoogle Scholar
Narayan, J. and Bhaumik, A., APL Mater. 4, 020701 (2016).CrossRefGoogle Scholar
Bundy, F.P., Bassett, W.A., Weathers, M.S., Hemley, R.J., Mao, H.U., and Goncharov, A.F., Carbon N. Y. 34, 141 (1996).CrossRefGoogle Scholar
Corrigan, F. R. and Bundy, F. P., J. Chemical Phys 63, 3812 (1975).CrossRefGoogle Scholar
Chen, C., Wang, Z., Kato, T., Shibata, N., Taniguchi, T., and Ikuhara, Y., Nat. Commun. 6, 6327 (2015).CrossRefGoogle Scholar
Angus, J.C. and Hayman, C.C., Science 241, 913 (1988).CrossRefGoogle Scholar
Narayan, J. and Bhaumik, A., APL Mater. 3, 100702 (2015) and two US Patents pending 62/245,018(2015) and 62/202,202(2015).CrossRefGoogle Scholar
Narayan, J. and Bhaumik, A., J. Appl. Phys. 118, 215303 (2015).CrossRefGoogle Scholar
Solozhenko, V.L., High Press. Res. 13, 199 (1995).CrossRefGoogle Scholar
Solozhenko, V.L., Turkevich, V.Z., and Holzapfel, W.B., J. Phys. Chem. B 103, 2903 (1999).CrossRefGoogle Scholar
Kester, D.J. and Messier, R., J. Appl. Phys. 72, 504 (1992).CrossRefGoogle Scholar
Narayan, J., Wu, H., and Vispute, R. D., J. Electro. Mater. 25, 143 (1996).CrossRefGoogle Scholar
Narayan, J., Mater. Sc. And Eng. B 45, 30 (1997).CrossRefGoogle Scholar
Singh, R.K. and Narayan, J., Mater. Sci. Eng. B 3, 217 (1989).CrossRefGoogle Scholar
Narayan, J., J. Appl. Phys. 52, 1289 (1981).CrossRefGoogle Scholar
Prawer, S. and Nemanich, R.J., Philos. Trans. A. Math. Phys. Eng. Sci. 362, 2537 (2004).CrossRefGoogle Scholar
Reich, S., Ferrari, A.C., Arenal, R., Loiseau, A., Bello, I., and Robertson, J., Phys. Rev. B 71, 205201 (2005).CrossRefGoogle Scholar
Karch, K. and Bechstedt, F., Phys. Rev. B 56, 7404 (1997).CrossRefGoogle Scholar
Nemanich, R. J., Solin, S. A., and Martin, R. M., Phys. Rev. B 23, 6348 (1981).CrossRefGoogle Scholar
Sanjurjo, J. A., López-Cruz, E., Vogl, P., and Cardona, M., Phys. Rev. B 28, 4579 (1983).CrossRefGoogle Scholar
Narayan, J. and Larson, B. C., J. Appl. Phys, 93, 278 (2003).CrossRefGoogle Scholar
Narayan, J., Acta Mater 61, 2703 (2013).CrossRefGoogle Scholar
Meng, Y., Mao, H.-K., Eng, P.J., Trainor, T.P., Newville, M., Hu, M.Y., Kao, C., Shu, J., Hausermann, D., and Hemley, R.J., Nat. Mater. 3, 111 (2004).CrossRefGoogle Scholar
McCulloch, D.G., Lau, D.W.M., Nicholls, R.J., and Perkins, J.M., Micron 43, 43 (2012).CrossRefGoogle Scholar