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Development of an all-SiC neuronal interface device

Published online by Cambridge University Press:  16 May 2016

Evans Bernardin ,
Christopher L. Frewin ,
Abhishek Dey ,
Richard Everly ,
Jawad Ul Hassan ,
Erik Janzén ,
Joe Pancrazio  and
Stephen E. Saddow
Evans Bernardin*
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, FL 33612, U.S.A.
Christopher L. Frewin
Affiliation:
Department of Bioengineering, University of Texas at Dallas, Dallas, TX 75080, U.S.A
Abhishek Dey
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, FL 33612, U.S.A.
Richard Everly
Affiliation:
Nanotechnology Research and Education Center @ U.S.F., Tampa, FL 33617, U.S.A.
Jawad Ul Hassan
Affiliation:
Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Erik Janzén
Affiliation:
Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Joe Pancrazio
Affiliation:
Department of Bioengineering, University of Texas at Dallas, Dallas, TX 75080, U.S.A
Stephen E. Saddow
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, FL 33612, U.S.A.
*
*(Email: [email protected])
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Abstract

The intracortical neural interface (INI) is a key component of brain machine interfaces (BMI) which offer the possibility to restore functions lost by patients due to severe trauma to the central or peripheral nervous system. Unfortunately today’s neural electrodes suffer from a variety of design flaws, mainly the use of non-biocompatible materials based on Si or W with polymer coatings to mask the underlying material. Silicon carbide (SiC) is a semiconductor that has been proven to be highly biocompatible, and this chemically inert, physically robust material system may provide the longevity and reliability needed for the INI community. The design, fabrication, and preliminary testing of a prototype all-SiC planar microelectrode array based on 4H-SiC with an amorphous silicon carbide (a-SiC) insulator is described. The fabrication of the planar microelectrode was performed utilizing a series of conventional micromachining steps. Preliminary data is presented which shows a proof of concept for an all-SiC microelectrode device.

Keywords

devicesbiomedicalplasma-enhanced CVD (PECVD) (deposition)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 55: Electronics and Photonics , 2016 , pp. 3679 - 3684
Copyright
Copyright © Materials Research Society 2016 

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References

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