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Comparison of simulated and measured light emission spectra from solid state incandescent light emitting devices

Published online by Cambridge University Press:  14 July 2020

Abhinav Shukla
Affiliation:
Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station, TX, United States
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station, TX, United States
Tyler W. Kuo
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, United States
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Abstract

In this paper, the light emission phenomena over solid-state incandescent light emitting devices have been modelled based on Planck's law of blackbody radiation. The emission spectra from the thermal excitation of nano-resistors with and without inclusion of an Indium Tin Oxide (ITO) or amorphous silicon (a-Si) thin film filter is simulated and compared with those measured from actual devices. The simulated emission spectra are further utilized to study the light characteristics for SSI-LED with ITO, a-Si and polycrystalline silicon (poly-Si) thin film filters.

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Articles
Copyright
Copyright © Materials Research Society 2020

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