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Carrier Density Modulation in PbSe Quantum Dot Films via In-Solution Ligand Exchange

Published online by Cambridge University Press:  12 May 2020

Tom Nakotte Open the ORCID record for Tom Nakotte [Opens in a new window] ,
Hongmei Luo  and
Jeff Pietryga
Tom Nakotte
Affiliation:
Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, NM88003 Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico87545, United States
Hongmei Luo
Affiliation:
Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, NM88003
Jeff Pietryga*
Affiliation:
Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico87545, United States
*
*Correspondence [email protected]
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Abstract

In-solution ligand exchange of PbSe QDs is used to examine the effect of capping ligand on the carrier density of PbSe QD films. Results show that carrier density can be modulated by a factor of 5 by choice of ligand without any additional post deposition treatments. Proper fabrication and measurement conditions for calculating carrier densities from C-V measurements using a sandwich structure on P-doped Si/SiO2/Al2O3/QD/Au structure capacitance devices are outlined. Combining carrier density results with field-effect-transistor measurements, promising ligands which display lower carrier densities without having a significant drop off in carrier mobility are identified as candidates for photodetection purposes.

Type
Articles
Information
MRS Advances , Volume 5 , Issue 40-41: Nanoscale and Quantum Materials , 2020 , pp. 2091 - 2099
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Copyright
Copyright © Materials Research Society 2020

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References

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