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Atomic-scale Authentication with Resonant Tunneling Diodes

Published online by Cambridge University Press:  24 February 2016

J. Roberts ,
I. E. Bagci ,
M. A. M. Zawawi ,
J. Sexton ,
N. Hulbert ,
Y. J. Noori ,
C. S. Woodhead ,
M. Missous ,
M. A. Migliorato  and
U. Roedig
...Show all authors
J. Roberts
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
I. E. Bagci
Affiliation:
School of Computing and Communications, Lancaster University, Lancaster, LA1 4WA, UK.
M. A. M. Zawawi
Affiliation:
School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, UK.
J. Sexton
Affiliation:
School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, UK.
N. Hulbert
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
Y. J. Noori
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
C. S. Woodhead
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
M. Missous
Affiliation:
School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, UK.
M. A. Migliorato
Affiliation:
School of Electrical and Electronic Engineering, University of Manchester, M13 9PL, UK.
U. Roedig
Affiliation:
School of Computing and Communications, Lancaster University, Lancaster, LA1 4WA, UK.
R. J. Young*
Affiliation:
Physics Department, Lancaster University, Lancaster, LA1 4YB, UK.
*
*(Email: [email protected])

Abstract

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The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

Keywords

semiconductingmolecular beam epitaxy (MBE)electronic material
Type
Articles
Information
MRS Advances , Volume 1 , Issue 22: Electronics and Photonics , 2016 , pp. 1625 - 1629
Copyright
Copyright © Materials Research Society 2016 

References

REFERENCES

Contemporary Cryptology: The Science of Information Integrity, ed. Simmons, G. J. (IEEE Press, 1994).Google Scholar
Pappu, R., Recht, B., Taylor, J., and Gershenfeld, N., Science 297, 2026 (2002).Google Scholar
Gassend, B., Clarke, D., van Dijk, M., and Devadas, S., Proceedings of the Computer and Communications Security Conference, 148 (2002)Google Scholar
Holcomb, D. E., Burleson, W. P., and Fu, K., Proceedings of the Conference on RFID Security, 7 (2007).Google Scholar
Kumar, S., Guajardo, J., Maes, R., Schrijen, G. J., and Tuyls, P., IEEE International Workshop on Hardware Oriented Security and Trust, 67 (2008).Google Scholar
Chen, Q., Csaba, G., Lugli, P., Schlichtmann, U., and Ruhrmair, Ulrich, IEEE International Symposium on Hardware-Oriented Security and Trust, 134 (2011).Google Scholar
Helfmeier, C., Nedospasov, D., Boit, C., and Seifert, J., IEEE International Symposium on Hardware-Oriented Security and Trust, 1 (2013).Google Scholar
Tsuchiya, M., and Sakaki, H., Appl. Phys. Lett. 49, 88 (1986).Google Scholar
Cirac, J. I., and Zoller, P., Nature Phys. 8, 264 (2012).Google Scholar
Wegscheider, W., Schedelbeck, G., Abstreiter, G., Rother, M., and Bichler, M., Phys. Rev. Lett. 79, 1917 (1997).Google Scholar
Fölsch, S., Martinez-Blanco, J, Yang, J., Kanisawa, K., and Erwin, S. C., Nature Nanotech. 9, 505 (2014).Google Scholar
Zawawi, M. A. M., KaWa, I., Sexton, J. and Missous, M., IEEE Transactions on Electron Devices. 61, 2338–2342 (2014).Google Scholar
Wilkinson, V. A., Kelly, M. J., and Carr, M., Semicond. Sci. Technol. 12, 91 (1997).Google Scholar
Kelly, M. J., Semicond. Sci. Technol. 15, 79 (2000).Google Scholar
Dasmahapatra, P., Sexton, J., Missous, M., Shao, C., and Kelly, M. J., Semicond. Sci. Technol. 27, 085007 (2012).Google Scholar
Shao, C., Sexton, J., Missous, M., and Kelly, M. J., Electronics Letters 49, 10 (2013).Google Scholar
Roberts, J. et al. , Sci. Rep. 5, 16456 (2015).Google Scholar
Missous, M., Kelly, M. J. and Sexton, J.. IEEE Electron Device Letters 36, 6 (2015).Google Scholar
Rürrmair, U., Lecture Notes in Computer Science 6052, 328 (2010).Google Scholar
Li, P. W., Kuo, D. M. T., and Hsu, Y. C., Appl. Phys. Lett. 89, 133105 (2006).Google Scholar
Lai, W., Kuo, D. M. T., and Li, P., Physica E 41, 886 (2009).Google Scholar
Chen, K., Chien, C., and Li, P., Nanotechnol. 21, 055302 (2010).CrossRefGoogle Scholar