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Anomalous Number Fluctuation Noise in Localized Transition Metal Dichalcogenide Layers: Generalization of McWhorter’s Mechanism
Published online by Cambridge University Press: 15 January 2018
Abstract
The mechanism of electrical noise in transition metal dichalcogenides (TMDCs) has mostly been attributed to charge carrier fluctuations between the oxide traps and the conducting channel, in accordance with the McWhorter model. However, the original McWhorter model was formulated for diffusive transport with conducting carriers having extended electronic wave functions. Our work serves to generalize the McWhorter mechanism to include strongly localized systems such as the TMDC family and provides an explanation for the unusual exponential behavior of noise magnitude with temperature.
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- Copyright © Materials Research Society 2018
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