Hostname: page-component-669899f699-ggqkh Total loading time: 0 Render date: 2025-04-28T23:15:11.860Z Has data issue: false hasContentIssue false
  • English
  • Français

All inorganic quantum dot light emitting devices with solutionprocessed metal oxide transport layers

Published online by Cambridge University Press:  15 February 2016

R. Vasan ,
H. Salman  and
M. O. Manasreh
R. Vasan*
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA-72701
H. Salman
Affiliation:
Microelectronics and Photonics program, University of Arkansas, Fayetteville, AR, USA-72701
M. O. Manasreh
Affiliation:
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA-72701
*
*(Email: [email protected])
Get access

Abstract

All inorganic quantum dot light emitting devices with solution processedtransport layers are investigated. The device consists of an anode, a holetransport layer, a quantum dot emissive layer, an electron transport layer and acathode. Indium tin oxide coated glass slides are used as substrates with theindium tin oxide acting as the transparent anode electrode. The transport layersare both inorganic, which are relatively insensitive to moisture and otherenvironmental factors as compared to their organic counterparts. Nickel oxideacts as the hole transport layer, while zinc oxide nanocrystals act as theelectron transport layer. The nickel oxide hole transport layer is formed byannealing a spin coated layer of nickel hydroxide sol-gel. On top of the holetransport layer, CdSe/ZnS quantum dots synthesized by hot injection method isspin coated. Finally, zinc oxide nanocrystals, dispersed in methanol, are spincoated over the quantum dot emissive layer as the electron transport layer. Thematerial characterization of different layers is performed by using absorbance,Raman scattering, XRD, and photoluminescence measurements. The completed deviceperformance is evaluated by measuring the IV characteristics,electroluminescence and quantum efficiency measurements. The device turn on isaround 4V with a maximum current density of ∼200 mA/cm2 at9 V.

Keywords

optoelectronicoxideluminescence
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 305 - 310
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Shirasaki, Y., Supran, G. J., Bawendi, M. G., and Bulović, V., Nat. Phot. 7, 13 (2013).Google Scholar
Sun, Q., Wang, Y. A., Li, L. S., Wang, D., Zhu, T., Xu, J., Yang, C. and Li, Y., Nat. Phot. 1, 717 (2007).Google Scholar
Bhaumik, S., and Pal, A. J., Appl. Mat. Inter. 6, 11348 (2014).Google Scholar
Mashford, B. S., Stevenson, M., Popovic, Z., Hamilton, C., Zhou, Z., Breen, C., Steckel, J., Bulovic, V., Bawendi, M., Coe-Sullivan, S., and Kazlas, P. T., Nat. Phot. 7, 407 (2013).CrossRefGoogle Scholar
Bhaumik, S., and Pal, A. J., IEEE J. Quant. Elec. 49, 03325 (2013).Google Scholar
Kumar, B., Campbell, S. A., and Ruden, P. P., J. Appl. Phys. 114, 044507 (2013).Google Scholar
Kumar, B., Hue, R., Gladfelter, W. L., and Campbell, S. A., J. Appl. Phys. 112, 034501 (2012).Google Scholar
Anikeeva, P. O., Madigan, C. F., Halpert, J. E., Bawendi, M. G., and Bulović, V., Phys. Rev. B 78, 085434 (2008).Google Scholar
Kwak, J., Bae, W. K., Lee, D., Park, I., Lim, J., Park, M., Cho, H., Woo, H., Yoon, D. Y., Char, K., Lee, S., and Lee, C., Nano Letters 12, 052362 (2012).CrossRefGoogle Scholar
Srnbnek, R., Hotovy, I., Malcher, V., Vincze, A., McPhail, D., Littlewood, S., IEEE ASDAM, 303-06 (2000).Google Scholar
Bae, W. K., Park, Y. S., Lim, J., Lee, D., Padilha, L. A., McDaniel, H., Robel, I., Lee, C., Pietryga, J. M., and, Klimov, I., Nat. Comm. 4, 2661–69 (2013).Google Scholar