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AlGaN/GaN HEMTs with 2DHG Back Gate Control

Published online by Cambridge University Press:  26 December 2017

Wei-Tse Lin ,
Wen-Chia Liao ,
Yi-Nan Zhong  and
Yue-ming Hsin
Wei-Tse Lin
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City 32001, Taiwan
Wen-Chia Liao
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City 32001, Taiwan
Yi-Nan Zhong
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City 32001, Taiwan
Yue-ming Hsin*
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City 32001, Taiwan
*
*(Email: [email protected])
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Abstract

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

Keywords

III-Vpiezoelectricelectronic structure
Type
Articles
Information
MRS Advances , Volume 3 , Issue 3: Electronics, Magnetics and Photonics , 2018 , pp. 137 - 141
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Copyright
Copyright © Materials Research Society 2017 

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References

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