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Thin -film transistors based on Zinc Oxide channel layer andMolybdenum doped Indium Oxide transparent electrodes

Published online by Cambridge University Press:  26 January 2016

Mateusz Tomasz Mądzik ,
Elangovan Elamurugu ,
Raquel Flores  and
Jaime Viegas
Mateusz Tomasz Mądzik*
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates
Elangovan Elamurugu
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates
Raquel Flores
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates
Jaime Viegas
Affiliation:
Masdar Institute, Abu Dhabi, United Arab Emirates
*
*(Email: [email protected])
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Abstract

Thin-film transistors (TFT) were fabricated at room-temperature (RT) utilizingzinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. Thecommon bottom-gate TFTs were fabricated on commercially available thermalsilicon oxide (100 nm thick) coated silicon wafers. A total of 100 devices weremade in a 1 inch square area as 10 × 10 matrix, by varying the channelwidth and length, between 5 µm and 300 µm. Output and transfercharacteristics of the fabricated devices were extracted from a semiconductorparameter analyzer. A threshold voltage (V Th) of 10 V and an I ON/I OFF ratio of 1 × 10-5 were obtained. The impact ofchannel dimensions on the device performance was investigated, confirming thatthe saturation current (I sat) is directly proportional to the channel width (W), andinversely proportional to channel length (L), in agreement withfield effect device theory.

Keywords

electronic materialmicroelectronicssputtering
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 281 - 285
Copyright
Copyright © Materials Research Society 2016 

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References

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