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Structural and Electrical Characterization of Amorphous and Crystalline Manganese Oxide Thin Films Deposited by DC Magnetron Sputtering

Published online by Cambridge University Press:  02 May 2016

David H. Olson ,
Kenneth D. Shaughnessy ,
Emma G. Langford ,
Michael Boyle ,
Muhammad B. Haider ,
David Lawrence  and
Costel Constantin
David H. Olson
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Kenneth D. Shaughnessy
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Emma G. Langford
Affiliation:
Department of Chemistry, James Madison University, Harrisonburg, VA 22807
Michael Boyle
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Muhammad B. Haider
Affiliation:
Department of Physics, King Fahd University of Petroleum & Minerals, Dhahran 34464, Saudi Arabia
David Lawrence
Affiliation:
Department of Integrated Science and Technology, James Madison University, Harrisonburg, VA 22807
Costel Constantin*
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
*
*(Email: [email protected])
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Abstract

The environmental impact resulting from the use of fossil fuel as an energy source affects the entire globe. Eventually, fossil fuels will no longer be a reasonable source of energy and alternative energy sources will be needed. Thermoelectric materials (TE) that directly convert heat into electricity are a viable option to replace the conventional fossil fuel because they are reliable, cost effective, and use no moving parts. Recently researchers discovered the existence of giant Seebeck coefficient in manganese oxide (MnO2) powders, which ignited an increased interest in MnO2-based materials. In this work we present a systematic structural and electrical characterization of amorphous and crystalline MnxOy thin films. These films were deposited at room temperature on heated silicon and sapphire substrates by DC Magnetron Sputtering. Our preliminary results show that MnxOy/silicon thin films undergo a crystalline change from Mn2O3 to Mn3O4 as annealing temperature is increased from 300°C to 500°C.

Keywords

crystallographic structureoxideelectrical properties
Type
Articles
Information
MRS Advances , Volume 1 , Issue 60: Energy and Sustainability , 2016 , pp. 3929 - 3934
Copyright
Copyright © Materials Research Society 2016 

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References

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