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A Reactive Molecular Dynamics Study of Atomistic Mechanisms During Synthesis of MoS2 Layers by Chemical Vapor Deposition

Published online by Cambridge University Press:  15 January 2018

Sungwook Hong ,
Aravind Krishnamoorthy ,
Chunyang Sheng ,
Rajiv K. Kalia ,
Aiichiro Nakano  and
Priya Vashishta
Sungwook Hong*
Affiliation:
Collaboratory for Advanced Computing and Simulations, Department of Physics & Astronomy, Department of Computer Science, Department of Chemical Engineering & Materials Science, and Department of Biological Sciences, University of Southern California, Los Angeles, CA90089-0242, USA
Aravind Krishnamoorthy
Affiliation:
Collaboratory for Advanced Computing and Simulations, Department of Physics & Astronomy, Department of Computer Science, Department of Chemical Engineering & Materials Science, and Department of Biological Sciences, University of Southern California, Los Angeles, CA90089-0242, USA
Chunyang Sheng
Affiliation:
Collaboratory for Advanced Computing and Simulations, Department of Physics & Astronomy, Department of Computer Science, Department of Chemical Engineering & Materials Science, and Department of Biological Sciences, University of Southern California, Los Angeles, CA90089-0242, USA
Rajiv K. Kalia
Affiliation:
Collaboratory for Advanced Computing and Simulations, Department of Physics & Astronomy, Department of Computer Science, Department of Chemical Engineering & Materials Science, and Department of Biological Sciences, University of Southern California, Los Angeles, CA90089-0242, USA
Aiichiro Nakano
Affiliation:
Collaboratory for Advanced Computing and Simulations, Department of Physics & Astronomy, Department of Computer Science, Department of Chemical Engineering & Materials Science, and Department of Biological Sciences, University of Southern California, Los Angeles, CA90089-0242, USA
Priya Vashishta
Affiliation:
Collaboratory for Advanced Computing and Simulations, Department of Physics & Astronomy, Department of Computer Science, Department of Chemical Engineering & Materials Science, and Department of Biological Sciences, University of Southern California, Los Angeles, CA90089-0242, USA
*
*(Email: [email protected])
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Abstract

Transition metal dichalcogenide (TMDC) monolayers like MoS2 are promising materials for future electronic applications. Large-area monolayer MoS2 samples for these applications are typically synthesized by chemical vapor deposition (CVD) using MoO3 reactants and gas-phase sulfur precursors. Recent experimental studies have greatly improved our understanding of reaction pathways in the CVD growth process. However, atomic mechanisms of sulfidation process remain to be fully elucidated. In this work, we present quantum-mechanically informed and validated reactive molecular dynamics (RMD) simulations for CVD synthesis of MoS2 layers using S2 precursors. Our RMD simulations clarify atomic-level reaction pathways for the sulfidation of MoO3 surfaces by S2, which is a critical reaction step for CVD synthesis of MoS2 layers. These results provide a better understanding of the sulfidation process for the scalable synthesis of defect-free MoS2 and other TMDC materials.

Keywords

chemical vapor deposition (CVD) (chemical reaction)nanostructuresimulation
Type
Articles
Information
MRS Advances , Volume 3 , Issue 6-7: Nanomaterials , 2018 , pp. 307 - 311
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Copyright
Copyright © Materials Research Society 2018 

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References

REFERENCES

Geim, A. K. and Grigorieva, I. V., Nature 499 (7459), 419-425 (2013).CrossRefGoogle Scholar
Gupta, A., Sakthivel, T. and Seal, S., Prog. Mater Sci. 73, 44–126 (2015).CrossRefGoogle Scholar
Mak, K. F., Lee, C., Hone, J., Shan, J. and Heinz, T. F., Phys. Rev. Lett. 105 (13), 136805 (2010).CrossRefGoogle Scholar
Lembke, D. and Kis, A., ACS Nano 6 (11), 10070–10075 (2012).Google Scholar
Venkata Subbaiah, Y., Saji, K. and Tiwari, A., Adv. Funct. Mater. 26 (13), 2046–2069 (2016).Google Scholar
Lee, Y. H., Zhang, X. Q., Zhang, W., Chang, M. T., Lin, C. T., Chang, K. D., Yu, Y. C., Wang, J. T. W., Chang, C. S. and Li, L. J., Adv. Mater. 24 (17), 2320–2325 (2012).Google Scholar
Weber, T., Muijsers, J. C., vanWolput, H. J. M. C., Verhagen, C. P. J. and Niemantsverdriet, J. W., J. Phys. Chem. 100, 14144–14150 (1996).CrossRefGoogle Scholar
Chen, J., Tang, W., Tian, B., Liu, B., Zhao, X., Liu, Y., Ren, T., Liu, W., Geng, D. and Jeong, H. Y., Adv. Sci. 3 (8) (2016).Google Scholar
Kumar, P., Singh, M., Sharma, R. K. and Reddy, G., Mater. Res. Express 3 (5), 055021 (2016).Google Scholar
Salazar, N., Beinik, I. and Lauritsen, J. V., Phys. Chem. Chem. Phys. 19, 14020–14029 (2017).Google Scholar
Liang, T., Shin, Y. K., Cheng, Y.-T., Yilmaz, D. E., Vishnu, K. G., Verners, O., Zou, C., Phillpot, S. R., Sinnott, S. B. and van Duin, A. C. T., Annu. Rev. Mater. Res. 43, 109–129 (2013).CrossRefGoogle Scholar
van Duin, A. C. T., Dasgupta, S., Lorant, F. and Goddard, W. A., J. Phys. Chem. A 105 (41), 9396–9409 (2001).CrossRefGoogle Scholar
Hong, S., Krishnamoorthy, A., Rajak, P., Tiwari, S. C., Misawa, M., Shimojo, F., Kalia, R. K., Nakano, A. and Vashishta, P., Nano Lett. 17, 4866–4872 (2017).CrossRefGoogle Scholar
Nosé, S., J. Chem. Phys. 81 (1), 511–519 (1984).CrossRefGoogle Scholar
Hoover, W. G., Phys. Rev. A 31 (3), 1695 (1985).Google Scholar
Najmaei, S., Liu, Z., Zhou, W., Zou, X., Shi, G., Lei, S., Yakobson, B. I., Idrobo, J.-C., Ajayan, P. M. and Lou, J., Nat. Mater. 12, 754–759 (2013).Google Scholar
Taheri, P., Wang, J., Xing, H., Destino, J. F., Arik, M. M., Zhao, C., Kang, K., Blizzard, B., Zhang, L. and Zhao, P., Mater. Res. Express 3 (7), 075009 (2016).Google Scholar
Jeon, J., Lee, J., Yoo, G., Park, J.-H., Yeom, G. Y., Jang, Y. H. and Lee, S., Nanoscale 8 (38), 16995–17003 (2016).Google Scholar