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Preparation of iridium metal films by spray chemical vapor deposition

Published online by Cambridge University Press:  04 February 2020

Yoshiyuki Seki
Affiliation:
Center for Hyper Media Research, Graduate School of Engineering, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan
Yutaka Sawada
Affiliation:
Center for Hyper Media Research, Graduate School of Engineering, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan
Hiroshi Funakubo*
Affiliation:
Department of Materials Science and Engineering, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa, 226-850 Japan
Kazuhisa Kawano
Affiliation:
Advanced Materials Research Laboratory, TOSOH Corporation, 2743-1, Hayakawa, Ayase-shi, Kanagawa, 252-1123, Japan
Noriaki Oshima
Affiliation:
Advanced Materials Research Laboratory, TOSOH Corporation, 2743-1, Hayakawa, Ayase-shi, Kanagawa, 252-1123, Japan
*
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Abstract

Metal Ir films were prepared by spray chemical vapor deposition (CVD) in air from an Ir precursor, (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD). Film deposition was ascertained at 270–430°C on a SiO2/Si substrate and the deposition rate increased with the deposition temperature but was saturated above 330°C. The obtained films consisted of Ir metal without any iridium oxide impurity irrespective of the deposition temperature. Films tended to orient to (111) with increasing deposition temperature. Resistivity of these Ir films decreased with increasing film thickness and reached to values on the order of 10-6 Ω・cm, which was the same order of the values for bulk Ir metal. Good step coverage was observed for the Ir metal films deposited at 270°C and 330°C. This shows that the simple spray CVD process in air is a good candidate for depositing Ir metal films with good conductivity and step coverage.

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Articles
Copyright
Copyright © Materials Research Society 2020

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