Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-23T13:59:20.939Z Has data issue: false hasContentIssue false

Preparation of iridium metal films by spray chemical vapor deposition

Published online by Cambridge University Press:  04 February 2020

Yoshiyuki Seki
Affiliation:
Center for Hyper Media Research, Graduate School of Engineering, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan
Yutaka Sawada
Affiliation:
Center for Hyper Media Research, Graduate School of Engineering, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan
Hiroshi Funakubo*
Affiliation:
Department of Materials Science and Engineering, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa, 226-850 Japan
Kazuhisa Kawano
Affiliation:
Advanced Materials Research Laboratory, TOSOH Corporation, 2743-1, Hayakawa, Ayase-shi, Kanagawa, 252-1123, Japan
Noriaki Oshima
Affiliation:
Advanced Materials Research Laboratory, TOSOH Corporation, 2743-1, Hayakawa, Ayase-shi, Kanagawa, 252-1123, Japan
*
Get access

Abstract

Metal Ir films were prepared by spray chemical vapor deposition (CVD) in air from an Ir precursor, (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD). Film deposition was ascertained at 270–430°C on a SiO2/Si substrate and the deposition rate increased with the deposition temperature but was saturated above 330°C. The obtained films consisted of Ir metal without any iridium oxide impurity irrespective of the deposition temperature. Films tended to orient to (111) with increasing deposition temperature. Resistivity of these Ir films decreased with increasing film thickness and reached to values on the order of 10-6 Ω・cm, which was the same order of the values for bulk Ir metal. Good step coverage was observed for the Ir metal films deposited at 270°C and 330°C. This shows that the simple spray CVD process in air is a good candidate for depositing Ir metal films with good conductivity and step coverage.

Type
Articles
Copyright
Copyright © Materials Research Society 2020

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Kawano, K., Furukawa, T., Takamori, M., Tada, K., Yamakawa, T., Oshima, N., Fujisawa, H. and Shimizu, M., Mater. Rec. Soc. Symp. Proc., 784, C3.30.1–6 (2004).Google Scholar
Fuijisawa, H., Watari, S., Iwamoto, N., Shimizu, M., Furukawa, T., Kawano, K. and Oshima, N., Jpn. J. Appl. Phys., 45, 73547359 (2006).CrossRefGoogle Scholar
Sawada, Y., Kobayashi, C., Seki, S., and Funakubo, H., Thin Solid Films, 409, 4650 (2002).CrossRefGoogle Scholar
Kondo, T., Funakubo, H., Akiyama, K., Enta, H., Seki, Y., Wang, M.H., Uchida, T., Sawada, Y., J. Crystal Growth, 311, 642646 (2009).CrossRefGoogle Scholar
Kondo, T., Sawada, Y., Funakubo, H., Akiyama, K., Kiguchi, T., Wang, M., and Uchida, T., Electrochem. Solid-State Lett., 12, D42D44 (2009).CrossRefGoogle Scholar
Kondo, T., Sawada, Y., Akiyama, K., Funakubo, H., Kiguchi, T., Seki, S., Wang, M.H., Uchida, T., Thin Solid Films, 516, 58645867 (2008).CrossRefGoogle Scholar
Kondo, T., Aoyama, T., Uchida, T, Seki, Y., Ninomiya, K., Iwasa, A., Konayashi, C., Seki, S., Enta, H., Funakubo, H., Ozao, R., Shishido, T., Sawada, Y., J. Flux Growth, 3, 1417 (2008.)Google Scholar
Kondo, T., Funakubo, H., Akiyama, K., Wang, M., Uchida, T. and Sawada, Y., Tran. Mater. Res. Soc. Jpn., 33, 13631366 (2008).CrossRefGoogle Scholar
Jones, A., Aspinall, H., Chalker, P., Potter, R., Manning, T., Loo, Y., O’Kane, R., Gaskell, J., and Smith, L., Chem. Vap. Depo., 12, 8398 (2006)CrossRefGoogle Scholar
CRC Handbook of Chemistry and Physics, ed. Lide, D. R. (CRC Press, Boca Raton, 1991) 72nd ed., p. 1235.Google Scholar
Chiba, H., Hirano, M., Kawano, K., Oshima, N. and Funakubo, H., J. Ceram. Soc. Jpn., 124, 694696 (2016).CrossRefGoogle Scholar
Fujisawa, H., , Watari, S., Iwamoto, N., Shimizu, M., Furukawa, T., Kawano, K., and Oshima, N., Jpn. J. Appl. Phys. , 45, 73547359 (2006).CrossRefGoogle Scholar