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Photonic Crystal Selective Structures for Solar Thermophotovoltaics

Published online by Cambridge University Press:  21 December 2015

Zhiguang Zhou ,
Enas Sakr ,
Omar Yehia ,
Anubha Mathur  and
Peter Bermel
Zhiguang Zhou
Affiliation:
Purdue University, School of Electrical & Computer Engineering, 1205 W State St., West Lafayette, Indiana, USA, 47907
Enas Sakr
Affiliation:
Purdue University, School of Electrical & Computer Engineering, 1205 W State St., West Lafayette, Indiana, USA, 47907
Omar Yehia
Affiliation:
Purdue University, School of Mechanical Engineering, 585 Purdue Mall, West Lafayette, Indiana, USA, 47907
Anubha Mathur
Affiliation:
Purdue University, School of Electrical & Computer Engineering, 1205 W State St., West Lafayette, Indiana, USA, 47907
Peter Bermel*
Affiliation:
Purdue University, School of Electrical & Computer Engineering, 1205 W State St., West Lafayette, Indiana, USA, 47907
*
*(Email: [email protected])
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Abstract

Solar thermophotovoltaic (STPV) systems convert sunlight into electricity via thermal radiation. The efficiency of this process depends critically on both the selective absorber and the selective emitter, which are controlled by both the materials and the photonic design. For high concentration solar TPV applications, 2D photonic crystals (PhCs) made of refractory metals such as tungsten have demonstrated promising results. For even higher performance, we propose two photonic crystal-based designs to both collect solar heat and reradiate above-gap photons. First, a PhC selective structure (IPSS), which combines 2D photonic crystals and filters into a single device. Second, an Er-Yb-Tm co-doped fused silica coated with a 17-bilayer structure also offers significant selectivity with greater ease of fabrication. Finite difference time domain (FDTD) and rigorous coupled wave analysis (RCWA) simulations show that both can significantly suppress sub-bandgap photons. This increases sunlight-to-electricity conversion for photonic crystal-based emitters above 24.3% at 100 suns concentration or 27% at 1000 suns concentration using a Ga0.42In0.58As PV diode with a bandgap of 0.7 eV (nearly lattice-matched to InP).

Keywords

absorptionoptical propertiesphotovoltaic
Type
Articles
Information
MRS Advances , Volume 1 , Issue 59: Energy and Sustainability , 2016 , pp. 3883 - 3889
Copyright
Copyright © Materials Research Society 2015 

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