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Optical Properties of Thin Films of Haycockite

Published online by Cambridge University Press:  13 June 2019

Barys Korzun ,
Marin Rusu ,
Thomas Dittrich ,
Anatoly Galyas  and
Andrey Gavrilenko
Barys Korzun*
Affiliation:
The City University of New York, Borough of Manhattan Community College, 199 Chambers St., New York, NY10007, U.S.A.
Marin Rusu
Affiliation:
Helmholtz-Zentrum Berlin fuer Materialen und Energie GmbH, Hahn-Meitner Platz 1, Berlin14109, Germany
Thomas Dittrich
Affiliation:
Helmholtz-Zentrum Berlin fuer Materialen und Energie GmbH, Hahn-Meitner Platz 1, Berlin14109, Germany
Anatoly Galyas
Affiliation:
Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus, 19 P. Brovki, Minsk220072, Belarus
Andrey Gavrilenko
Affiliation:
Kazan State Power Engineering University, 51 Krasnoselskaya St., Kazan, 420066, Russia
*
*(Email: [email protected])
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Abstract

Thin films of haycockite Cu4Fe5S8 on glass substrates were deposited by flash evaporation technique from powders of this compound. The composition of thin films correspond to the atomic content of Cu, Fe, and S of 24.13, 27.90, and 47.97 at.% with the Cu/ Fe and S/ (Cu + Fe) atomic ratios of 0.87 and 0.92 respectively, whereas the corresponding theoretical values for this material amount to 0.80 and 0.89. The as-prepared thin films of haycockite consist of a set of separate fractions of approximately identical areas of about 400 - 600 μm2. It can be assumed that this structure evolved during cooling down of thin films since it completely covers the surface of thin films. A small inclusion of a second phase with the chemical composition close to talnakhite Cu9Fe8S16 is also observed. Haycockite Cu4Fe5S8 is found to be a direct gap semiconductor with the energy band gap Eg equal to 1.26 eV as determined using both transmission and surface photovoltage methods.

Keywords

thin filmoptical propertiesscanning electron microscopy (SEM)
Type
Articles
Information
MRS Advances , Volume 4 , Issue 37: Energy and Sustainability , 2019 , pp. 2023 - 2033
Copyright
Copyright © Materials Research Society 2019 

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References

Wolden, C.A., Kurtin, J., Baxter, J.B., Repins, I., Shaheen, S.E., Torvik, J.T., Rockett, A.A., Fthenakis, V.M., and Aydil, E.S., J. Vac. Sci. Technol. A, 29, 030801 (2011).CrossRefGoogle Scholar
National Renewable Energy Laboratory, Best Research-Cell Efficiencies. United States of America: National Renewable Energy Laboratory, 2014.Google Scholar
Yund, R.A. and Kullerud, G., J. Petrol. 7, Pt. 3, 454 (1966).CrossRefGoogle Scholar
Cabri, L.J., Econ. Geol. 62, 910 (1967).CrossRefGoogle Scholar
Cabri, L.J. and Harris, D.C., Econ. Geol. 66, 673 (1971).CrossRefGoogle Scholar
Cabri, L.J., Econ. Geol. 68, 443 (1973).CrossRefGoogle Scholar
Raghavan, V., J. Phase Equilib. Diff. 25, 450 (2004).CrossRefGoogle Scholar
Cabri, L.J. and Hall, S.R., Am. Mineral. 57, 689 (1972).Google Scholar
Rowland, J.F., Hall, S.R., Acta Cryst. B31, 2105 (1975).CrossRefGoogle Scholar
Korzun, B.V., Schorr, S., Gavrilenko, A.N., Matukhin, V.L., Fedotova, J.A., Rusu, M., and Lux-Steiner, M.C., Program and Abstracts of the 18-th International Conference on Ternary and Multinary Compounds (ICTMC18), Salzburg, Austria, August 27 - 31, 2012 / - Salzburg, 2012. – Abstract P09-P09, 132.Google Scholar
Schorr, S., Korzun, B.V., Lobanovski, L.S., Yanushkevich, K.I., Galyas, A.I., Sobol, V.R., Gavrilenko, A.N., Matukhin, V.L., Abstracts of European Congress and Exhibition on Advanced Materials and Processes EUROMAT2013, Sevilla, Spain, September 8 - 13, 2013/ - Sevilia, 2013. - Abstract E1II-P-TH-PS2-22.Google Scholar
Korzun, B., Galyas, A., J. Electron. Mater. 48, 3351 (2019).CrossRefGoogle Scholar
Duzhko, V., Timoshenko, V.Yu., Koch, F., Dittrich, Th., Phys. Rev. B64, 075204 (2001).CrossRefGoogle Scholar
Pankove, J.I., Optical Processes in Semiconductors, Prentice-Hall, Inc. (1971).Google Scholar
Oguchi, T., Sato, K., Teranishi, T., J. Phys. Soc. Jpn. 48, 123 (1980).CrossRefGoogle Scholar
Tauc, J., Mater. Res. Bull. 3, 37 (1968).CrossRefGoogle Scholar
Ukhanov, Iu.I., Optical Properties of Semiconductors, Moscow, Izdatel’stvo Nauka, 1977. 368 p. In Russian.Google Scholar
Brattain, W.H., Phys. Rev. 72, 345 (1947).Google Scholar
Kronik, L., Shapira, Y., Surf. Sci. Rep., 37, 1 (1999).CrossRefGoogle Scholar
Hinrichs, V., Fengler, S., Lascona, R., Kulyuk, L., Dittrich, Th., Lux-Steiner, M.Ch., Rusu, M., Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, Villepinte, France, September 30 - October 4, 2013, 349 (2013).Google Scholar
Fengler, S., Dittrich, Th., Rusu, M., J. Appl. Phys. 118, 035501 (2015).CrossRefGoogle Scholar