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Optical Properties of Germanium Doped Cubic GaN

Published online by Cambridge University Press:  20 December 2016

Donat J. As ,
Michael Deppe ,
Jürgen Gerlach  and
Dirk Reuter
Donat J. As*
Affiliation:
Universität Paderborn, Department Physik, Warburger Strasse 100, 33098 Paderborn, Germany
Michael Deppe
Affiliation:
Universität Paderborn, Department Physik, Warburger Strasse 100, 33098 Paderborn, Germany
Jürgen Gerlach
Affiliation:
Leibniz-Institut für Oberflächenmodifizierung (IOM) e.V., Permoserstr. 15, 04318 Leipzig, Germany
Dirk Reuter
Affiliation:
Universität Paderborn, Department Physik, Warburger Strasse 100, 33098 Paderborn, Germany
*
*(Email: [email protected])
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Abstract

We report on recent doping experiments of cubic GaN epilayers by Ge and investigate in detail the optical properties by photoluminescence spectroscopy. Plasma-assisted molecular beam epitaxy was used to deposit Ge-doped cubic GaN layers with nominal thicknesses of 600 nm on 3C-SiC(001)/Si(001) substrates. The Ge doping level could be varied by around six orders of magnitude by changing the Ge effusion cell temperature. A maximum free carrier concentration of 3.7×1020 cm-3 was measured in the GaN layers via Hall-effect at room temperature. Low temperature photoluminescence (PL) showed a clear shift of the donor-acceptor emission to higher energies with increasing Ge-doping. Above a Ge concentration of ∼ 2x1018cm-3 the near band edge lines merge to one broad band. From temperature dependent measurements of the observed excitonic and donor-acceptor transitions a donor-energy of ∼ 36 meV could be estimated for Ge.

Keywords

dopantmolecular beam epitaxy (MBE)luminescence
Type
Articles
Information
MRS Advances , Volume 2 , Issue 5: Electronics, Magnetics and Photonics , 2017 , pp. 283 - 288
Copyright
Copyright © Materials Research Society 2016 

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References

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