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Observation of atomic-like transition in Sapphire crystal by deep UV photoluminescence spectroscopy

Published online by Cambridge University Press:  13 April 2020

Nikesh Maharjan
Affiliation:
Department of Physics, Brooklyn College and the Graduate Center of the City University of New York, Brooklyn, NY 11210, USA
Mim Lal Nakarmi*
Affiliation:
Department of Physics, Brooklyn College and the Graduate Center of the City University of New York, Brooklyn, NY 11210, USA
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Abstract

Deep UV photoluminescence (PL) spectroscopy was employed to study optical properties of a sapphire substrate sample. The sample was photo-excited by the third harmonic laser of a Ti:sapphire pulse laser at wavelength ~ 266 nm which is a below bandgap excitation. In the low temperature (12 K) PL measurement, we observed two sharp atomic-like emissions in the ultraviolet region with peaks at 3.361 eV and 3.315 eV with spectral line-width of 0.85 and 3.30 nm respectively, in the PL spectrum. We performed temperature and power-dependent PL measurements of the sample and observed that the emission peak positions did not change with changing excitation power and sample temperature. We also performed X-ray photoelectron spectroscopy for chemical composition analysis of the sample to explore the origin of the atomic-like emission that could be used for single photon sources for quantum information technology. We will discuss a possible electronic transition and its origin in sapphire.

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Articles
Copyright
Copyright © Materials Research Society 2020

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References

REFERENCES

Nakamura, S. and Fassl, G., The Blue Laser Diode (Springer, New York, 1997) chap. 4.CrossRefGoogle Scholar
Nakarmi, M. L., Cai, B., Lin, J. Y. and Jiang, H. X., Phys. Stat. Solidi A 209, 126 (2012).CrossRefGoogle Scholar
Zhang, J.P., Wang, H.M.,Sun, W.H., Adivarahan, V., Wu, S., Chitnis, A., Chen, C. Q., Shatalov, M. , Kuokstis, E., Yang, J. W.,and Asif Khan, M., J. of Electronic Mat. 32, 364 (2003).CrossRefGoogle Scholar
Kuznetsov, A. I., Abramov, V. N., Murk, V. V., and Namozov, B. P., Sov. Phys. Solid State 33, 1126 (1991).Google Scholar
Weber, J. R., Koehl, W. F., Varley, J. B., Janotti, A., Buckley, B. B., Van de Walle, C. G., and Awschalom, D. D., PNAS 10, (19) 8513-8518 (2010).CrossRefGoogle Scholar
Gruber, A., Dr¨abenstedt, A., Tietz, C., Fleury, L., Wrachtrup, J., von Borczyskowski, C., Science 276, 2012 (1997).CrossRefGoogle Scholar
Watson, G. H., Daniels, W. B., and Wang, C. S., J. of Appl. Phys. 52, 956-958 (1981).CrossRefGoogle Scholar
Schmidt, T., Lischka, K., and Zulehner, W., Rev. B 45, 8989 (1992).CrossRefGoogle Scholar
Pankove, J. I., Optical Processes in Semiconductors (Dover Publications, Inc. New York, 1971).Google Scholar
Chastain, J., Moulder, J. F., Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data (ULVAC-PHI, Incorporated, 1995).Google Scholar
Choi, M., Janotti, A., and Van de Walle, C. G., J. Appl. Phys. 113, 044501 (2013).CrossRefGoogle Scholar
O’Donnell, K. P. and Hourahine, B., Eur. Phys. J. Appl. Phys. 36, 91 (2006).CrossRefGoogle Scholar