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Nanoscale Characterization of WSe2 for Opto-electronics Applications

Published online by Cambridge University Press:  07 June 2017

Nirmal Adhikari ,
Avra Bandyopadhyay  and
Anupama Kaul
Nirmal Adhikari
Affiliation:
University of Texas at El Paso, El Paso, TX, United States
Avra Bandyopadhyay
Affiliation:
University of Texas at El Paso, El Paso, TX, United States
Anupama Kaul*
Affiliation:
University of Texas at El Paso, El Paso, TX, United States
*
*E-mail: [email protected]
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Abstract

Two dimensional (2D) thin transition metal dichalcogenides are being widely investigated for optoelectronics applications. Here, we report on the interfacial study of WSe2 with photo-absorber materials for efficient charge transport using Kelvin Probe Force Microscopy (KPFM) for solar cell applications. The WSe2 in these experiments was synthesized using Chemical Vapor Deposition (CVD) with a WO3 powder and Se pellets as the precursors, where the selenium was placed upstream in an Ar carrier gas within the furnace at a temperature zone of 260-270°C. For the interfacial analysis, nanoscale KPFM measurements show an average surface potential of 125 meV for the CVD synthesized WSe2 flakes. KPFM measurements signify that a thin layer of WSe2 can be used to suppress back recombination of carriers between the electron transport layer (ETL) and the absorber layer. A proper band alignment between ETL and absorber layer helps to increase the overall device performance, which we will elaborate upon in this work. Capacitance-voltage and capacitance-frequency measurements were measured to study the role of defects.

Keywords

defectschemical vapor deposition (CVD) (chemical reaction)photovoltaic
Type
Articles
Information
MRS Advances , Volume 2 , Issue 60: Nanomaterials , 2017 , pp. 3715 - 3720
Copyright
Copyright © Materials Research Society 2017 

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