Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T10:07:21.623Z Has data issue: false hasContentIssue false

MOCVD of Monolayer MoS2 using Novel Molybdenum Precursor i-Pr2DADMo(CO)3

Published online by Cambridge University Press:  26 February 2018

S. Ishihara*
Affiliation:
Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa214-8571, Japan. Research Fellow of the Japan Society for the Promotion of Science, 5-3-1, Kojimachi, Chiyoda-ku, Tokyo, 102-0083, Japan.
Y. Hibino
Affiliation:
Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa214-8571, Japan.
N. Sawamoto
Affiliation:
Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa214-8571, Japan.
H. Machida
Affiliation:
Gas-phase Growth Ltd, #301 Nokodai-Tamakoganei Venture Port, 2-24-16 Naka, Koganei, Tokyo184-0012, Japan.
H. Wakabayashi
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa226-8502, Japan.
A. Ogura
Affiliation:
Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa214-8571, Japan.
*
Get access

Abstract

Metal organic precursor has a sufficiently high vapor pressure at low temperature, contributing high-speed low-temperature MOCVD-MoS2 film formation. We fabricated monolayer MoS2 by 1 step cold-wall MOCVD using di-isopropyl-diazadiene-molybdenum tricarbonyl [i-Pr2DADMo(CO)3] and di-tertiary-butyl disulfide [(t-C4H9)2S2]. These precursors are able to be vaporized using bubbling system and deposited at low temperature. From the XPS investigations, Mo-S bonding peaks were observed and S:Mo ratio was calculated as 2:1, suggesting formation of MoS2. Moreover, molybdenum carbides and nitrogen impurities were not observed which was confirmed by XPS and EDX. From the results of Raman spectroscopy, AFM height distribution, and spectroscopic ellipsometry, it was determined that the film thickness is 0.64 nm which is corresponding to monolayer MoS2, the lateral grain size is approximately 100 nm, and the bandgap energy is 1.8 eV.

Type
Articles
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., and Kis, A., Nat. Nanotechnol. 6, 147 (2011).CrossRefGoogle Scholar
Yu, Y., Li, C., Liu, Y., Su, L., Zhang, Y., and Cao, L., Sci. Rep. 3, 1866 (2013).CrossRefGoogle Scholar
Ji, Q., Zhang, Y., Zhang, Y., and Liu, Z., Chem. Soc. Rev. 44, 2587 (2015).CrossRefGoogle Scholar
Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M., and Lou, J., Small 8, 966 (2012).CrossRefGoogle Scholar
Lee, Y. H., Zhang, X. Q., Zhang, W., Chang, M. T., Lin, C. T., Chang, K. D., Yu, Y. C., Wang, J. T. W., Chang, C. S., Li, L.-J., and Lin, T.-W., Adv. Mater. 24, 2320 (2012).CrossRefGoogle Scholar
Ishihara, S., Hibino, Y., Sawamoto, N., Ohashi, T., Matsuura, K., Machida, H., Ishikawa, M., Sudoh, H., Wakabayashi, H., and Ogura, A., Jpn. J. Appl. Phys. 55, 06GF01 (2016).CrossRefGoogle Scholar
Ishihara, S., Hibino, Y., Sawamoto, N., Ohashi, T., Matsuura, K., Machida, H., Ishikawa, M., Sudoh, H., Wakabayashi, H., and Ogura, A., Jpn. J. Appl. Phys. 55, 04EJ07 (2016).CrossRefGoogle Scholar
Ishihara, S., Hibino, Y., Sawamoto, N., Ohashi, T. Matsuura, K., Machida, H., Ishikawa, M., Wakabayashi, H., and Ogura, A., ECS J. Solid State Sci. Technol. 5, Q3012 (2016).CrossRefGoogle Scholar
Ishihara, S., Suda, K., Hibino, Y., Sawamoto, N., Ohashi, T., Yamaguchi, S., Matsuura, K., Machida, H., Ishikawa, M., Sudoh, H., Wakabayashi, H., and Ogura, A., MRS Proc. 1781, mrss15–2133709 (2015).CrossRefGoogle Scholar
Mun, J., Kim, Y., Kang, I.-S., Lim, S. K., Lee, S. J., Kim, J. W., Park, H. M., Kim, T., and Kang, S.-W., Sci. Rep. 6, 21854 (2016).CrossRefGoogle Scholar
Yim, C., O’Brien, M., McEvoy, N., Winters, S., Mirza, I., Lunney, J. G., and Duesberg, G. S., Appl. Phys. Lett. 104, 103114 (2014).CrossRefGoogle Scholar
Koffyberg, F. P., Dwight, K., and Wold, A., Solid State Commun. 30, 433 (1979).CrossRefGoogle Scholar