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The linear relationship of spin pumping energy in a La:YIG/Pt heterostructure used in a microwave rectifier

Published online by Cambridge University Press:  14 January 2019

Yiheng Rao*
Affiliation:
University of Electronic Science and Technology of China, Chengdu, 610054, China
Huaiwu Zhang
Affiliation:
University of Electronic Science and Technology of China, Chengdu, 610054, China
Dainan Zhang
Affiliation:
University of Electronic Science and Technology of China, Chengdu, 610054, China
Lichuan Jin
Affiliation:
University of Electronic Science and Technology of China, Chengdu, 610054, China
Qinghui Yang
Affiliation:
University of Electronic Science and Technology of China, Chengdu, 610054, China
Zhiyong Zhong
Affiliation:
University of Electronic Science and Technology of China, Chengdu, 610054, China
Jie Li
Affiliation:
University of Electronic Science and Technology of China, Chengdu, 610054, China
MingMing Li
Affiliation:
University of Electronic Science and Technology of China, Chengdu, 610054, China
*
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Abstract

La3+ doped yttrium iron garnet films have been grown on (111) oriented gadolinium gallium garnet substrates via Liquid phase epitaxy technique as a basic material for ISHE device fabrication. Pt as a material with a large spin hall angle was used as a spin detection layer. We investigated the dependence of the spin pumping effect on the power and frequency of the excitation microwaves in La:YIG/Pt bilayers by measuring the ISHE voltage. We demonstrated that the area under the ISHE curve(SISHE) across a wide power range had a nearly linear correlation with the input microwave power (Pin). The parameter SISHE can be used to describe the spin current energy in a Pt layer which can be a useful parameter for a microwave rectifier.

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Articles
Copyright
Copyright © Materials Research Society 2019 

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