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Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications

Published online by Cambridge University Press:  04 September 2020

Nidhi Open the ORCID record for Nidhi [Opens in a new window] ,
Tashi Nautiyal  and
Samaresh Das
Nidhi
Affiliation:
Department of Physics, Indian Institute of Technology, Roorkee
Tashi Nautiyal
Affiliation:
Department of Physics, Indian Institute of Technology, Roorkee
Samaresh Das*
Affiliation:
Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Delhi, India
*
*Email: [email protected]
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Abstract

Several techniques have been employed for large-scale synthesis of group 10 transition metal dichalcogenides (TMDCs) based on platinum and palladium for nano- and opto-electronic device applications. Nickel Sulphides (NixSy), belonging to group 10 TMDC family, have been widely explored in the field of energy storage devices such as batteries and supercapacitors, etc. and commonly synthesized through the solution process or hydrothermal methods. However, the high-quality thin film growth of NixSy for nanoelectronic applications remains a central challenge. Here, we report the chemical vapor deposition (CVD) growth of NiS2 thin film onto a two-inch SiO2/Si substrate, for the first time. Techniques such as X-ray photoelectron spectroscopy, X-ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, have been used to analyse the quality of this CVD grown NiS2 thin film. A high-quality crystalline thin film of thickness up to a few nanometres (~28 nm) of NiS2 has been analysed here. We also fabricated a field-effect device based on NiS2 thin film using interdigitated electrodes by optical lithography. The electrical performance of the fabricated device is characterized at room temperature. On applying the drain voltage from -2 to +2 V, the device shows drain current in the range of 10-9 A before annealing and in the range of 10-6 A after annealing. This, being comparable to that from devices based on MoS2 and other two-dimensional materials, projects CVD grown NiS2 as a good alternative material for nanoelectronic devices.

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MRS Advances , Volume 5 , Issue 52-53: Nanoscale and Quantum Materials , 2020 , pp. 2727 - 2735
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Copyright © Authors(s), 2020. Published by Cambridge University Press on behalf of Materials Research Society

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