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Influence of Aluminum concentration and substrate temperature on the physical characteristics in chemical sprayed ZnO:Al thin films

Published online by Cambridge University Press:  21 November 2017

Erick Velázquez Lozada ,
Tetyana Torchynska ,
Gabriela M. Camacho González  and
Luis Castañeda
Erick Velázquez Lozada*
Affiliation:
SEPI – ESIME ZAC – Instituto Politécnico Nacional, Ciudad de México. 07738, México.
Tetyana Torchynska
Affiliation:
ESFM – Instituto Politécnico Nacional, Ciudad de México. 07738, México.
Gabriela M. Camacho González
Affiliation:
ESIME – Instituto Politécnico Nacional, Ciudad de México. 07738, México.
Luis Castañeda
Affiliation:
ESIME – Instituto Politécnico Nacional, Ciudad de México. 07738, México.
*
*(Email: [email protected])
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Abstract

The continuous interest in the synthesis and properties study of materials has permitted the development of semiconductor oxides. Zinc oxide (ZnO) with hexagonal wurzite structure is a wide band gap n-type semiconductor and interesting material over a wide range. Chemically sprayed aluminium-doped zinc oxide thin films (ZnO:Al) were deposited on soda-lime glass substrates starting from zinc pentanedionate and aluminium pentanedionate. The influence of both the dopant concentration in the starting solution and the substrate temperature on the composition, morphology, and transport properties of the ZnO:Al thin films were studied. The structure of all the ZnO:Al thin films was polycrystalline, and variation in the preferential growth with the aluminium content in the solution was observed: from an initial (002) growth in films with low Al content, switching to a predominance of (101) planes for heavily dopant regime. The crystallite size was found to decrease with doping concentration and range from 33 to 20 nm. First-order Raman scattering from ZnO:Al, all having the wurtzite structure . The assignments of the E2 mode in ZnO:Al differ from previous investigations. The film composition and the dopant concentration were determined by Auger Electron Spectroscopy (AES); these results showed that the films are almost stoichiometric ZnO. The optimum deposition conditions leading to conductive and transparent ZnO:Al thin films were also found. In this way a resistivity of 0.03 Ω-cm with a (002) preferential growth, were obtained in optimized ZnO:Al thin films.

Keywords

thin filmAl
Type
Articles
Information
MRS Advances , Volume 2 , Issue 62: International Materials Research Congress XXVI , 2017 , pp. 3859 - 3864
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Copyright
Copyright © Materials Research Society 2017 

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References

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